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In the study of resistive random access memory using GeTeOx film as the switching layer, the device performed excellent property of bipolar resistive switching (BRS), which could be gradually transformed to the complementary resistive switching (CRS) by varying SET process current compliance. The conductive filament conduction mechanism of BRS could be verified by electrical characteristics and reliable data fitting. Through increasing current compliance of the SET process, CRS could be achieved due to higher activity of oxygen vacancies originated from the intensified thermal effect. This paper was beneficial to understand the switching mechanisms of BRS and CRS and provide a method to realize interconversion. Moreover, it was also a potential and promising device to be applied in the neurosynaptic biomimetic field. [ABSTRACT FROM AUTHOR]

An intentionally introduced interface layer in the resistive random-access memory (RRAM) devices play an important role in the improvement of resistive switching characteristics. In this paper, the resistive switching characteristics of ZrO2-based RRAM devices by inserting a thin TiO2 interface layer between electrodes and ZrO2 resistive switching layer were investigated. Compared with the Cu/ZrO2/Pt and Cu/ZrO2/TiO2/Pt devices, the Cu/TiO2/ZrO2/Pt and Cu/TiO2/ZrO2/TiO2/Pt devices showed much improved programing voltages, including lower forming voltage and lower set voltage. Moreover, the reset current was also improved. These results indicate that the TiO2 interface layer between the anode electrode and the resistive switching layer plays an important role in improving device performance. [ABSTRACT FROM AUTHOR]