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In this paper, five types of superjunction (SJ) configurations are investigated in the silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT). technology computer aided design simulations are carried out to give insight into the mechanism for improving turn-off loss (${E} _{ \mathrm{\scriptscriptstyle OFF}}$) by adopting SJ in the drift region of SOI-LIGBT. In mechanism revealing, collector–emitter voltage rising during the inductive load turn-off is divided into two phases: slow rising phase (SRP) and rapid rising phase (RRP). It is found that the depletion accompanying with carrier extraction in the drift region and at the collector is responsible for the SRP and RRP, respectively, and accordingly, the difference of turn-off transient among the five types of SJ configurations is clarified. Moreover, reduced ${E} _{ \mathrm{\scriptscriptstyle OFF}}$ can be realized by lowering the transition voltage from SRP to RRP (${V} _{\text {A}}$). Low electric potential from the emitter side can be delivered to the collector side through the undepleted regions in P-pillar, which largely determine ${V} _{\text {A}}$. According to the above-mentioned mechanism, an optimization strategy and a novel SJ SOI-LIGBT with composite P-pillar are proposed for the first time. The proposed SJ SOI-LIGBT achieves an ${E} _{ \mathrm{\scriptscriptstyle OFF}}~76.3$ % lower than the conventional SOI-LIGBT at ON-state voltage drop of ~1.41 V. [ABSTRACT FROM AUTHOR]

A novel 500-V rated silicon-on-insulator lateral insulated-gate bipolar transistor (SOI-LIGBT), featuring a W-shaped n-typed buffer and p-typed composite collectors, is proposed for the first time in this paper. The composite collectors which consist of a high-doped p+ layer and a low-doped p− layer can maintain a high level of collector-side hole injection in ON-state; the low-doped p− layer combining with the W-shaped buffer provides a low barrier path for electron extraction during turn-off; thus, high current capability and high turn-off speed can be realized at the same time. The measurement results show that 67.3% decrease in turn-off time can be obtained at the expense of only 6.3% of current capability. Compared with the standard SOI-LIGBT, no additional processing steps or process modifications are required for the proposed SOI-LIGBT. The low-doped p− collector is formed simultaneously with the emitter-side p-well while the W-shaped buffer is formed by diffusion overlapping of two neighboring windows. At 125 °C, the proposed SOI-LIGBT exhibits an ON-state voltage drop of 2.48 V, a saturated current density of 420 A/cm2, a turn-off time of <250 ns, and a short-circuit withstand time of $>4~\mu \text{s}$ , allowing significant improvements in power loss, operating frequency, and ruggedness for single-chip intelligent power ICs. [ABSTRACT FROM AUTHOR]