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In the first part of this article, a physics-based surface-potential compact model to describe current–voltage (I–V) relationship in few-layered ambipolar black phosphorus (BP) transistors is presented. The proposed model captures the essential physics of thin-film BP FETs by accounting for the effects of: 1) in-plane band-structure anisotropy in BP, as well as the asymmetry in electron and hole current conduction characteristics; 2) nonlinear Schottky-type source/drain contact resistances; 3) interface traps; 4) ambipolar current conduction in the device using two separate quasi-Fermi levels for electrons and holes; and 5) the effect of temperature on the model parameters. In this article, the model is validated against measured data of back-gated BP transistors with gate lengths of 1000 and 300 nm with the BP thickness of 7.3 and 8.1 nm and for the temperature range of 200–298 K. We also validate the model against numerical TCAD data of BP transistors with channel lengths of 300 and 600 nm and BP thickness of 6 nm. The model is also applied to unipolar 2-D FETs with channel materials, such as MoS2 and WSe2. Compared with prior BP FET models that are mainly suited for near-equilibrium transport and room-temperature operation, the model developed here shows excellent agreement with experimental and numerical data over broad bias and temperature range. [ABSTRACT FROM AUTHOR]

We report a physics-based surface-potential compact model to describe current–voltage (I – V) relationship in a few-layered ambipolar black phosphorus (BP) transistors. To model the device electrostatics, the 2-D density of states of carriers and Fermi–Dirac statistics are used, while carrier transport is described using the drift-diffusion formalism. The model also comprehends the effects of interface traps and voltage-dependent Schottky-type source/drain contact resistances. Compared with prior BP FET models that are mainly suited for near-equilibrium transport and room-temperature operation, the model developed here is applicable over broad bias and temperature range. Validation of the model against measurement data of BP transistors with gate lengths 300–1000 nm and operating temperature from 200–298 K is demonstrated in a companion article. [ABSTRACT FROM AUTHOR]

Graphene lateral spin valves (LSVs) are promising devices for future memory and magnetic field sensing applications. In this article, we study the dependence of the nonlocal spin resistance, $\Delta {R}_{{\text {NL}}}$ , and the baseline resistance, ${R}_{{\text {BS}}}$ , as a function of the graphene channel width, ${W}$. The scaling trend is quantitatively assessed by using graphene deposited by chemical vapor deposition, which provides a large number of devices with consistent performance. As ${W}$ is scaled from 10 to $0.5~\mu \text{m}$ , the change in $\Delta {R}_{{\text {NL}}}$ matches the theory of contact-induced spin relaxation with a current spin polarization of 3%–5% and a spin diffusion length of $\lambda _{s} = 1.5$ – $2.5~\mu \text{m}$. We also observe a systematic and dramatic decrease in ${R}_{{\text {BS}}}$ , which we attribute to the reduction in charge current spreading. However, we find in the narrowest devices that a small ${R}_{{\text {BS}}}$ remains that arises due to thermoelectric effects, and this trend is confirmed using gate voltage- and charge current-dependent analyses. Finally, we introduce a nonideality factor, ${m} = \vert {R}_{{\text {BS}}} / \Delta {R}_{{\text {NL}}}\vert $ , as a figure of merit to describe the suppression of the baseline relative to the spin signal. In an LSV with ${L} = {1.5}\,\,\mu \text{m}$ , ${W} = {0.5}\,\,\mu \text{m}$ , and n-type conduction, the nonideality factor is as low as ${m} = {0.0252}\,\,\pm \,\,0.0202$ at room temperature showing that nearly ideal bipolar and symmetric spin signals can be achieved in graphene LSVs. [ABSTRACT FROM AUTHOR]

Stochastic computing (SC) is a promising technology that can be used for low-cost hardware designs. However, SC suffers from its long latency. Although parallel processing can efficiently shorten the latency, duplicated stochastic number generators (SNGs) are necessary, which cause substantial hardware overhead. This paper proposes a scalable SNG based on the spin-Hall-effect (SHE), which is capable of generating multiple independent stochastic streams simultaneously. The design takes advantages of the efficient charge-to-spin conversion from the Spin-Hall material and the intrinsic stochasticity of nanomagnets. Compared to previous spintronic SNGs, the SHE-SNG can reduce the area by $1.6\times -7.8\times $ and the power by $4.9\times -13\times $ while increasing the degree of parallelism from 1 to 16. Compared to CMOS-based SNGs, the proposed SNG obtained $24\times -120\times $ and $53\times $ reduction in terms of area and power, respectively. Finally, three benchmarks were implemented, and the results indicate that SC implementations with the proposed SHE-SNG can achieve $1.2\times -29\times $ reduction of hardware resources compared to implementations with previous CMOS- and spintronic-based designs while scaling the degree of parallelism from 1 to 64. [ABSTRACT FROM AUTHOR]

Precise measurements of the mobility anisotropy along high-symmetry crystal axes in black phosphorus (BP) MOSFETs are reported. Locally back-gated BP MOSFETs with 13-nm HfO2 dielectric and channel length ranging from 0.3 to 0.7 $\mu \text{m}$ are fabricated. A single BP flake of a uniform thickness is exfoliated and etched along armchair (AC) and zigzag (ZZ) crystal axes, and the orientations are confirmed using optical and transmission electron microscopy analyses. The hole and electron mobilities along each direction are extracted using the transfer length method. The AC-to-ZZ hole mobility ratio is found to increase from 1.4 (1.5) to 2.0 (2.9) as the sheet concentration increased from $5.1\times 10^{\textsf {11}}$ to $1.9\times 10^{\textsf {12}}$ cm−2 at room temperature (77 K). The room-temperature electron mobility anisotropy is found to be similar to that for holes with an AC-to-ZZ mobility ratio increasing from 1.4 to 2.1 from $5.1\times 10^{\textsf {11}}$ to $1.9\times 10^{\textsf {12}}$ cm−2 though electrons showed only a very weak temperature dependence. A Boltzmann transport model is used to explain the concentration- and temperature-dependent mobility anisotropies which can be well described using a charge center scattering model. [ABSTRACT FROM AUTHOR]