1. Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor
- Author
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Shetty, Satish, Eisner, Savannah R., Hassan, Ayesha, Lalwani, Anand, Baral, Dinesh, Mazur, Yuriy I., Senesky, Debbie G., Churchill, H. O. H., Chen, Zhong, Mantooth, H. Alan, and Salamo, Gregory J.
- Abstract
We report for the first time on an aluminum nitride/gallium nitride (AlN/GaN) heterostructure as a microscale Hall effect sensor for current sensing applications in extreme environments. The AlN/GaN devices demonstrated high signal linearity as a function of the magnetic field across a temperature range from -193 °C to 407 °C. The measured room temperature (RT) supply voltage-related sensitivity (
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- 2024
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