1. High-Mobility, Low-Voltage Programmable/Erasable Ferroelectric Polymer Transistor Nonvolatile Memory Based on a P(VDF-TrFE)/PMMA Bilayer Gate Insulator.
- Author
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Xu, Meili, Qi, Weihao, Li, Shizhang, and Wang, Wei
- Subjects
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NONVOLATILE memory , *FERROELECTRIC polymers , *ORGANIC field-effect transistors , *INDIUM gallium zinc oxide , *SEMICONDUCTOR films , *TRANSISTORS , *METHYL methacrylate , *HIGH voltages - Abstract
Low mobility and high operating voltages are bottlenecks in the practical application of ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM). In this article, we demonstrate a high-mobility polymer semiconductor-based Fe-OFET NVM that can well operate at low programming/erasing voltages (VP/VE). The issue that hinders the reduction of the VP/VE in Fe-OFET NVMs is discussed. We develop a route to resolve the issue by building a thin bilayer gate insulator consisted of an ultrathin poly(methyl methacrylate) (PMMA) and a thin poly(vinylidenefluoride-trifluoroethylene) films. The processing compatibility, that is, the tri-layered core architecture consisting of polymer semiconductor and insulator films is prepared by a full-solution technology, is confirmed. The mechanism of the performance improvements by using the ultrathin PMMA in the Fe-OFET NVMs is investigated. As a result, the Fe-OFET NVM exhibits excellent performances at low VP/VE of ±15 V, with a high mobility up to 1.75 cm2/Vs, reliable memory endurance over 400 cycles, and stable memory retention over 65000 s. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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