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Pulse test techniques are widely adopted in characterizing both the static and dynamic performances of semiconductor devices considering various device structures and operating conditions. For gallium nitride (GaN) devices, due to the current collapse phenomenon, fast and accurate measurement of their key electrical parameters, such as dynamic ON-state resistance ${R}_{\text {ds}, \mathrm{\scriptscriptstyle ON}}$ , switching rising time, fall time, switching losses, and short-circuit (SC) robustness, becomes essential. This article presents a comprehensive review of state-of-the-art pulse test setup methods such as the double-pulse test (DPT), multiple-pulse test (MPT), and SC test (SCT) for the first time, which facilitates the GaN device structure design and practical applications in high efficiency and power density power converters. [ABSTRACT FROM AUTHOR]

Novel normally-OFF AlGaN/GaN MIS-high electron mobility transistors (HEMTs) with a ZrOx charge trapping layer are proposed. The deposition of the ZrOx charge trapping layer on the partially recessed AlGaN in conjunction with the Al2O3 gate dielectric has been accomplished. The developed MIS-HEMTs exhibit a threshold voltage of 1.55 ± 0.4 V and a maximum drain current of 730 ± 6 mA/mm, while associated low ON-resistance of $7.1~\pm ~0.2~\Omega \cdot $ mm, for a gate to drain separation of 3 $\mu \text{m}$. The TCAD simulation results are presented to explore the charge trapping and de-trapping behaviors. Moreover, the devices exhibit a high breakdown voltage. The results indicate the merits of employing ZrOx charge trapping layer to realize the normally-OFF GaN devices with low ON-state resistance. [ABSTRACT FROM AUTHOR]