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The planar nature of the GaN heterojunction devices provides extended dimensions for implementing monolithic power integrated circuits. This article presents a comprehensive review of the advancements in GaN power integration. Basic building blocks in a power integration platform based on p-GaN gate HEMT technology are discussed, including high- and low-voltage transistors, lateral field-effect rectifiers, resistors, and capacitors. Exemplary designs of monolithic gate driving circuit and detection/protection circuits based on this platform are demonstrated. Technologies to address other challenges, including the lack of mature complementary logic (CL) and the substrate-induced crosstalk effect, are also demonstrated. More forward-looking development of power integration based on wide bandgap semiconductors is also presented in a hybrid GaN/SiC field-effect transistor that is expected to harness the complementary merits of GaN and SiC, and ON-chip GaN-based nonvolatile memory device that could provide versatile intelligence.

In this work, a $\beta $ -Ga2O3 field-effect rectifier (FER) with a p-NiOx gate aimed at low conduction loss, low leakage current, and capability of on-chip integration has been demonstrated. The proposed FER exhibits a low turn-on voltage ( ${V}_{\text {on}}{)}$ of 0.85 V comparable to Schottky barrier diodes (SBDs). The p-NiOx in FER offers an additional conduction path at high forward bias, which enhances the forward current. Compared with the lateral heterojunction diode (HJD) and SBD on the same substrate, the FER shows the best tradeoff between ON-state and OFF-state power dissipation, including lower ${V}_{\text {on}}$ than HJD (~41% of HJD) and lower leakage current than SBD (four orders of magnitude lower). The merits of this structure also extend to the high-temperature operation regime of the device. Good rectification characteristics of FER are observed at elevated temperatures. The proposed FER with low ${V}_{\text {on}}$ , high-voltage blocking capability and process compatibility with field-effect transistors (FETs) has the potential of being used as a low-power loss rectifier in future $\beta $ -Ga2O3 power integrated circuits (ICs).