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Your search keyword '"Huang, Qianqian"' showing total 14 results
Start Over Author "Huang, Qianqian" Publication Year Range Last 50 years Journal ieee transactions on electron devices
14 results on '"Huang, Qianqian"'

3. A Surface Potential Based Full-Region Current Model for Doping Segregated TFETs

Author

Zhang, Fangxing, Li, Hao, Wang, Kaifeng, Dai, Wu, Jiao, Yanxin, Ding, Feilong, Ren, Ye, Wu, Yongqin, Bu, Weihai, Huang, Qianqian, Zhang, Lining, and Huang, Ru

Abstract

A physics-based SPICE model for dopant segregated tunneling field-effect transistors (DS-TFETs) with gate-to-drain underlap is developed for the design technology co-optimization (DTCO) of TFETs with the foundry process. It captures all the current components in full operation regions, including band-to-band tunneling (BTBT), forward p-i-n diode, gate leakage, and also ambipolar conduction. The channel surface potential is formulated first, with which the current expressions are derived and verified with experiments calibrated TCAD simulations. Model predictions of current, conductance, and voltage transfer characteristic (VTC) are in good agreement with measurement data of hardware devices (nTFET and pTFET) as well as circuits. This model has been written in Verilog-A language and employed in the TFET circuits design.

Published
2024
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14. A Comparative Study on the Impacts of Interface Traps on Tunneling FET and MOSFET.

Author

Qiu, Yingxin, Wang, Runsheng, Huang, Qianqian, and Huang, Ru

Subjects
METAL oxide semiconductor field-effect transistors, COMPARATIVE studies, QUANTUM tunneling, PHOTONIC band gap structures, SILICON, THRESHOLD voltage, SEMICONDUCTOR junctions
Abstract

In this paper, the impacts of interface traps on tunneling FET (TFET) are examined in terms of different trap energies and distributions, charge neutrality level (CNL), and effects of random trap fluctuation, in comparison with MOSFET. It is found that the Vth shifts and subthreshold swing (SS) degradation induced by interface traps in TFET and MOSFET have the same trends, but the impacts on $I_{{\rm \scriptstyle ON}}$ are different because of the novel conduction mechanism of TFETs when compared with MOSFETs. Moreover, nTFET is intrinsically more immune (or susceptible) to Vth shift induced by acceptor- (or donor-) type interface traps than nMOSFET. Therefore, reducing the potential degradation induced by the interface traps can be achieved by optimizing the position of CNL. The results indicate that nTFET is more immune to the Vth shift than nMOSFET with CNL below a critical energy. In addition, the trap-induced SS degradation of TFET is severer than MOSFET in electrostatics. Moreover, it is found that the $I_{{\rm \scriptstyle ON}}$ , Vth , and $I_{{\rm \scriptstyle OFF}}$ fluctuations in nMOSFET and nTFET are also dependent on the position of CNL. With CNL below the critical energy, the $I_{{\rm \scriptstyle ON}}$ fluctuation and Vth fluctuation of nTFET are smaller than those of nMOSFET. The results are helpful for the interface optimization of TFETs. [ABSTRACT FROM PUBLISHER]

Published
2014
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