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Gate turnoff (GTO) thyristor in the form of a device have exhibited a power handling capability of 37kW, a forward current of 12A, and the ability to block 3100V. The largest temperature increase occurs during device turnoff and the temperature over several cycles of operation is dependent on the thermal resistance, as indicated by the electrothermal simulations of SiC-GTO thyristors operating in a clamped inductive-load circuit.

A new study examines the effect of doping level and thickness on carrier transport in high-power AlGaN/GaN high electron mobility transistor structures.

A comparison of the threshold current density (J(sub th)) versus region thickness (d) curves for AlGaN/GaN lasers with those for AlGaAs/GaAs lasers reveals that the former have higher J(sub th) unless the active region is very thin. The double heterostructure lasers help in developing wide bandgap lasers because they have a thicker active region at the minima in the J(sub th) versus d curve. High optical losses in the materials result in easy lasing of the thick active region structures.

We report on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V2O5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe inversely scaling peak output current and transconductance. Devices exhibited a peak drain current of ~700 mA/mm and a peak transconductance of ~150 mS/mm, some of the highest reported thus far for a diamond metal semiconductor FET (MESFET). Reduced sheet resistance of the diamond surface after V2O5 deposition was verified by four probe measurement. These results show great potential for improvement of diamond FET devices through scaling of critical dimensions and adoption of robust transition metal oxides such as V2O5. [ABSTRACT FROM AUTHOR]