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The preliminary characterization of thin-film transistors (TFTs) based on a dispersion of ZnO nanorods in an n-type polymer semiconductor, [6, 6]-phenyl-[C.sub.61]-butyric acid methyl ester (PCBM), is reported. The results obtained showed a highly promising enhancement for high-performance solution-processable n-type OTFTs.

The synthesis and applications of semiconducting nanostructures such as zinc oxide (ZnO) nanowires and tungsten disulfide (W[S.sub.2]) nanotubes is reported. The findings from the studies could be used to fabricate the transistors/phototransistors and photovoltaic (PV) energy conversion cells.

In this paper, we report on the synthesis and applications of semiconducting nanostructures. Nanostructures of interest were zinc oxide (ZnO) nanowires and tungsten disulfide (WS2) nanotubes where transistors/phototransistors and photo-voltaic (PV) energy conversion cells have been fabricated. ZnO nanowires were grown with both high- and low-temperature approaches, depending on the application. Individual ZnO nanowire side-gated transistors revealed excellent performance with a field- effect mobility of 928 cm² /V · s. ZnO networks were proposed for large-area macroelectronic devices as a less lithographically intense alternative to individual nanowire transistors where mobility values in excess of 20 cm² /V · s have been achieved. Flexible PV devices utilizing ZnO nanowires as electron acceptors and for photoinduced charge separation and transport have been presented. Phototransistors were fabricated using individual WS2 nanotubes, where clear sensitivity to visible light has been observed. The results presented here simply reveal the potential use of inorganic nanowires/tubes for various optoelectronic devices. [ABSTRACT FROM AUTHOR]

The article presents a correction to the paper "Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors," by Flora M. Li, Gen-Wen Hsieh, Sharvari Dalal, et al., from the November 2008 issue.