1. Skewed Straintronic Magnetotunneling-Junction-Based Ternary Content-Addressable Memory—Part II.
- Author
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Manasi, Susmita Dey, Al-Rashid, Md Mamun, Atulasimha, Jayasimha, Bandyopadhyay, Supriyo, and Trivedi, Amit Ranjan
- Subjects
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ENERGY consumption , *ENERGY dissipation , *CAPACITORS , *ASSOCIATIVE storage , *ROBUST control - Abstract
Part I of this paper discussed the design of a four-terminal skewed straintronic magnetotunneling junction (ss-MTJ) switch, and its adaptation to a non-Boolean “one transistor, one trench capacitor, and one ss-MTJ” ternary content-addressable memory (TCAM) cell. This part of the paper discusses a TCAM array based on ss-MTJ-TCAM cells and the associated peripherals for search operation. We show that non-Boolean associative processing of the ss-MTJ-TCAM cells enhances energy-efficiency and performance of an ss-MTJ-based TCAM array. The energy-delay-product (EDP) of ss-MTJ-based TCAM is compared against CMOS-based TCAM for a $144\times256$ array. The minimum EDP in ss-MTJ-based TCAM is $\sim 10.8\times $ lower than the minimum EDP in CMOS-based TCAM. Additionally, the operational frequency at which the ss-MTJ-based design shows the minimum EDP is $\sim 9.4\times $ higher than the respective frequency in the CMOS-based design. We also compare ss-MTJ-based TCAM against other state-of-the-art MTJ-based TCAMs. The comparison shows that the ss-MTJ-based TCAM also outperforms MTJ-based TCAMs in cell density, search delay, and search energy. Finally, we discuss implications of process variability in ss-MTJ to TCAM implementation and identify critical design parameters in ss-MTJ-based TCAM to enhance its robustness and area/ energy-efficiency. [ABSTRACT FROM PUBLISHER]
- Published
- 2017
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