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In this paper, an analytical model of the channel surface potential in the tunnel field effect transistors (TFETs) is established and verified. The dual-modulation effects in TFETs that the surface potential of the channel is alternatively controlled by the gate bias and drain bias in different operating regimes are emphasized and studied. The transition point corresponding to the switching between the two operating regimes is also analyzed quantitatively. For the first time, a closed-form analytical model of the surface potential in TFETs, including the impacts of both the gate voltage and drain voltage is proposed. Furthermore, a compact current model of the TFET-based on the derived surface potential expression is given. The model predicted tunneling current agree well with the TCAD simulation results in all operating regions of TFETs, which will be helpful for the circuit properties simulation of the TFET. [ABSTRACT FROM AUTHOR]

A dynamic current model for the double gate negative capacitance field-effect transistor (NCFET) of the metal–ferroelectric–insulator–semiconductor (MFIS) structure is presented in this work. With a damping parameter ρ in the Landau–Khalatnikov (LK) theory for general ferroelectric (FE) materials, the gate control equation of NCFET is intrinsically dynamic which is solved directly as a basis of NCFET modeling. With the time-dependent charge densities at the source and drain sides, a dynamic current model is formulated analytically for the first time, considering the dynamic terms in a self-consistent way. The model has been verified with numerical TCAD simulations. It accurately reproduces the static negative capacitance (NC) effect in enhancing the driving current, as well as the dynamic NC effect, in the conduction delay and hysteresis for a wide range of NCFET parameters. The dynamic model after implementations is successfully applied to circuit simulations such as ring oscillators without convergence issues. [ABSTRACT FROM AUTHOR]

We thank Prof. Shaker for his interest in the above article and his positive statement in the Comments. Regarding the errors raised by Prof. Shaker, the following are our replies. [ABSTRACT FROM AUTHOR]