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Your search keyword '"Ang, Kah-Wee"' showing total 11 results
Start Over Author "Ang, Kah-Wee" Journal ieee transactions on electron devices
11 results on '"Ang, Kah-Wee"'

4. Charge Trapping Layer Enabled Normally-Off β-Ga2O3 MOSFET

Author

He, Minghao, Wen, Kangyao, Deng, Chenkai, Li, Mujun, Cui, Yifan, Wang, Qing, Yu, Hongyu, and Ang, Kah-Wee

Abstract

In this work, a normally-OFF $\beta $ -Ga2O3 MOSFET enabled by charge trapping layer (CTL) is demonstrated for the first time. The CTL consists of Al:HfO $_{x} 1$ :5 and the tunneling barrier (TB) is Al2O3/HfOx/Al2O3 stack. The developed Ga2O3 MOSFET exhibits a wide ${V}_{\text {th}}$ tuning range to normally-OFF operation and a long-lasting retention characteristic of −0.3 V (ten years). The device obtains a breakdown voltage (BV) of 1815 V, showing high reverse blocking capability based on the proposed CTL technique. ${I}$ – ${V}$ and ${C}$ – ${V}$ analyses are carried out under various temperatures to study the mechanism and explore the charge trapping and de-trapping processes. The results indicate a promising method to achieve E-mode operation for Ga2O3 MOSFET with low charge loss and stable ${V}_{\text {th}}$ .

Published
2023
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6. Improvement of β-Ga2O3 MIS-SBD Interface Using Al-Reacted Interfacial Layer.

Author

He, Minghao, Cheng, Wei-Chih, Zeng, Fanming, Qiao, Zepeng, Chien, Yu-Chieh, Jiang, Yang, Li, Wenmao, Jiang, Lingli, Wang, Qing, Ang, Kah-Wee, and Yu, Hongyu

Subjects
SCHOTTKY barrier diodes, STRAY currents, ALUMINUM oxide, ELECTROSTATIC fields, GAUSSIAN distribution, ALUMINUM oxide films
Abstract

In this article, a β-Ga2O3 metal-interlayer-semiconductor Schottky barrier diode (MIS-SBD) using Al-reacted aluminum oxide as the interlayer is demonstrated for the first time and compared with conventional metal-semiconductor (MS) Schottky barrier diode (SBD). The aluminum oxide is formed by sputtering a thin Al layer on Ga2O3 substrate and then annealed in O2 at 300 °C. With the insertion of Al-reacted interlayer, the SBD subthreshold swing (SS) is significantly improved to 61 mV/dec with an average current range of > 6 orders. Example of atomic layer deposited (ALD) Al2O3 as the interlayer is also fabricated and characterized. J – V study corrected by Gaussian distribution model shows that all the samples statistically exhibit similar mean barrier heights (BHs). This indicates that the interlayer hardly affects the electrostatic field and band bending as experienced by carrier injections. C – V study provides different BH results in different sample setups. The result proves that Al-reacted interfacial layer helps eliminate interface degradation as compared with ALD Al2O3. Overall, MIS-SBD by Al-reaction method exhibits improved SS, reduced reverse leakage current (I0), low ideality factor, good ON-OFF ratio (> 109), and minimized interface charges as compared with its respective counterparts. The result of this article serves as a promising interface engineering technique for Ga2O3-based SBD designs. [ABSTRACT FROM AUTHOR]

Published
2021
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