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Your search keyword '"Arthur, Stephen"' showing total 2 results
Start Over Author "Arthur, Stephen" Journal ieee transactions on electron devices
2 results on '"Arthur, Stephen"'

1. DC and transient performance of 4H-SiC double-implant MOSFETs

Author

Losee, Pete A., Matocha, Kevin, Arthur, Stephen D., Nasadoski, Jeffrey, Stum, Zachary, Garrett, Jerome L., Schutten, Michael, Dunne, Greg, and Stevanovic, Ljubisa

Subjects
Diodes -- Evaluation, Voltage -- Evaluation, Metal oxide semiconductor field effect transistors -- Design and construction, Silicon carbide -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

SiC vertical MOSFETs are fabricated and characterized with blocking voltages of about 1 kV and a specific on-resistance as low as 8.3 m[omega].[cm.sup.2]. The internal body diode's reverse recovery characteristics have shown injection-limited conduction, which are attributed to the implanted P-anode layers.

Published
2008

2. Stability and 2-D simulation studies of avalanche breakdown in 4H-SiC DMOSFETs with JTE

Author

Okayama, Taizo, Arthur, Stephen D., Rao, Arthur R. Ramakrishna, Kishore, Kuna, and Rao, Mulpuri V.

Subjects
Metal oxide semiconductor field effect transistors -- Electric properties, Metal oxide semiconductor field effect transistors -- Research, Voltage -- Measurement, Silicon carbide -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The performance of bias stress induced breakdown voltage (BV) slump measurements on DMOSFETs is discussed. Findings reveal that the BV slumped after the DMOSFET was bias stressed at 1200 V for 2 hours at 175 degree Celsius.

Published
2008

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