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Your search keyword '"Chang, Kai-Chun"' showing total 12 results
Start Over Author "Chang, Kai-Chun" Journal ieee transactions on electron devices
12 results on '"Chang, Kai-Chun"'

3. Analysis of Abnormal C–V Hump on Si3N4 MIS-HEMT With Mesa Isolation Under Negative Gate Bias Stress

Author

Lee, Ya-Huan, Chang, Kai-Chun, Lin, Hsin-Ni, Tai, Mao-Chou, Huang, Wei-Chen, Lin, Jia-Hong, Kuo, Hung-Ming, Lee, Jason, Huang, I-Yu, and Chang, Ting-Chang

Abstract

In this study, negative gate bias stress (NGBS) is applied to the Si3N4 metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs). The gate electron injected into the Si3N4 dielectric layer and the holes generated by the impact ionization trapped into the AlGaN layer are the two main degradation mechanisms, which cause the unstable threshold voltage. Moreover, it is discovered that an abnormal ${C}$ – ${V}$ hump is generated after NGBS because of the uneven hole trapping at the AlGaN near the channel under the gate. The unusual direction of the electric field, which is related to the mesa isolation technology, is observed under NGBS condition in the Silvaco TCAD simulation. The location of the hole trapping is verified by the positive gate bias after NGBS during the recovery time. Finally, the device without the mesa isolation is used to verify the abnormal degradation results.

Published
2024
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4. The Transition of Threshold Voltage Shift of Al2O3/Si3N4 AlGaN/GaN MIS-HEMTs Under Negative Gate Bias Stress From DC to AC

Author

Lee, Ya-Huan, Chang, Kai-Chun, Tai, Mao-Chou, Wang, Yu-Xuan, Lin, Hsin-Ni, Yeh, Yu-Hsuan, Kuo, Hung-Ming, Tsai, Xin-Ying, Lee, Jason, Huang, I-Yu, Chang, Ting-Chang, and Sze, Simon

Abstract

In this study, the reliability issues are discussed under dc and ac negative gate bias stress (ac-NGBS) in Al2O3/Si3N4 metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs). Converse degradation between these two stress conditions is discovered. The holes generated by trap-assisted thermionic field emission (TA-TFE) are trapped into the Al2O3 layer, so that the threshold voltage ( ${V}_{\text {th}}$ ) decreases under dc negative gate bias stress (dc-NGBS). ${V}_{\text {th}}$ increases because of the hot electrons injected into the GaN layer, while the device is turned on quickly under ac-NGBS. In addition, the degradation mechanisms under dc-NGBS and ac-NGBS are confirmed by the OFF-state gate and drain leakages, respectively. Silvaco TCAD is used to validate the degradation mechanism under ac-NGBS. Finally, the characteristics of the ${V}_{\text {th}}$ shift transition from dc to ac NGBS are discussed.

Published
2024
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6. Analysis of Breakdown-Voltage Increase on SiC Junction Barrier Schottky Diode Under Negative Bias Stress

Author

Jin, Fu-Yuan, primary, Chen, Po-Hsun, additional, Hung, Wei-Chun, additional, Hung, Wei-Chieh, additional, Chang, Chin-Han, additional, Ciou, Fong-Min, additional, Lin, Yu-Shan, additional, Chang, Kai-Chun, additional, Lin, Yun-Hsuan, additional, Kuo, Ting-Tzu, additional, Chen, Kuan-Hsu, additional, Yeh, Chien-Hung, additional, and Chang, Ting-Chang, additional

Published
2023
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7. Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

Author

Chen, Wen-Chung, primary, Tan, Yung-Fang, additional, Lin, Shih-Kai, additional, Zhang, Yong-Ci, additional, Chang, Kai-Chun, additional, Lin, Yun-Hsuan, additional, Yeh, Chien-Hung, additional, Wu, Chung-Wei, additional, Yeh, Yu-Hsuan, additional, Wang, Kao-Yuan, additional, Huang, Hui-Chun, additional, Tsai, Tsung-Ming, additional, Huang, Jen-Wei, additional, and Chang, Ting-Chang, additional

Published
2021
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8. Investigation of Threshold Voltage and Drain Current Degradations in Si3N4/AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation

Author

Kuo, Hung-Ming, Chang, Ting-Chang, Chang, Kai-Chun, Lin, Hsin-Ni, Kuo, Ting-Tzu, Yeh, Chien-Hung, Lee, Ya-Huan, Lin, Jia-Hong, Tsai, Xin-Ying, Huang, Jen-Wei, and Sze, Simon

Abstract

In this study, X-ray irradiation of metal–insulator–semiconductor (MIS) AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed. After the X-ray irradiation, the threshold voltage ( ${V}_{\text {th}}{)}$ shift and ON-state current ( ${I}_{\text {on}}{)}$ variation are observed. However, after a recovery period, the degradation trend of ${V}_{\text {th}}$ and that of ${I}_{\text {on}}$ are in opposite directions. Such opposite degradations are demonstrated and explained in this study. As X-rays irradiate the devices, holes, and defects are generated in the GaN layer and Si3N4 layer, respectively. To prove the degradation mechanism induced by X-rays in MIS HEMT, the following characteristics are offered. The drain current ( ${I}_{d}{)}$ and the source current ( ${I}_{s}{)}$ under the X-ray irradiation are introduced to prove the hole generation. The two-step degradation of the gate current ( ${I}_{g}{)}$ after X-ray irradiation provides evidence of the formation of defect states. Moreover, the different degradation behaviors between Schottky-gate HEMT and MIS HEMT are compared and verification of the position of generation of defect states in the Si3N4 layer is given accordingly.

Published
2023
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9. Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al 2 O 3 /Si 3 N 4 Gate Insulator Under Hot Switching.

Author

Wu, Pei-Yu, Tsai, Xin-Ying, Chang, Ting-Chang, Yeh, Yu-Hsuan, Huang, Wei-Chen, Chang, Kai-Chun, Tsai, Tsung-Ming, and Huang, Jen-Wei

Subjects
MODULATION-doped field-effect transistors, ALUMINUM oxide, INDIUM gallium zinc oxide, IMPACT ionization, WIDE gap semiconductors, GALLIUM nitride, METAL insulator semiconductors
Abstract

As a transmitter power amplifier (PA), the electrical output characteristics of gallium nitride (GaN) high electron mobility transistors (HEMTs) are closely related to the drain current versus drain voltage (${I}_{d}$ – ${V}_{d}$) characteristics. Any abnormalities in the ${I}_{d}$ – ${V}_{d}$ characteristics will seriously affect device performance. Therefore, many groups have investigated the kink effect of GaN HEMTs. One of the commonly used measurement methods of the kink effect is the ${I}_{d}$ – ${V}_{d}$ forward and reverse sweep. In this study, we used the same method for Al2O3/Si3N4–AlGaN/GaN metal–insulator–semiconductor HEMT (MIS HEMT) devices. We found that not only did the kink effect occurred but ${I}_{d}$ also increased abnormally during the reverse sweep and after a series of electrical measurements. At the end of the forward sweep, impact ionization caused by a high ${V}_{d}$ generated electron–hole pairs and some holes accumulated under the gate region, which caused the negative shift of the threshold voltage (${V}_{\text{Th}}$), leading to an abnormal increase in ${I}_{d}$ during the reverse sweep. [ABSTRACT FROM AUTHOR]

Published
2022
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10. Advanced Low-Temperature–High-Pressure Hydrogen Treatment for Interface Defect Passivation in Si- and SiGe-Channel MOSCAPs

Author

Chen, Kuan-Hsu, primary, Lin, Chien-Yu, additional, Chen, Min-Chen, additional, Lin, Yu-Shan, additional, Chang, Yen-Cheng, additional, Lin, Yun-Hsuan, additional, Jin, Fu-Yuan, additional, Ciou, Fong-Min, additional, Chang, Kai-Chun, additional, Hung, Wei-Chun, additional, Kuo, Ting-Tzu, additional, Yeh, Chien-Hung, additional, Chen, Po-Hsun, additional, and Chang, Ting-Chang, additional

Published
2020
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11. Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs

Author

Ciou, Fong-Min, primary, Hsu, Jui-Tse, additional, Chang, Ting-Chang, additional, Lin, Chien-Yu, additional, Jin, Fu-Yuan, additional, Lin, Yu-Shan, additional, Hung, Wei-Chun, additional, Chang, Kai-Chun, additional, Chang, Yen-Cheng, additional, Lin, Yun-Hsuan, additional, Hung, Yang-Hao, additional, Huang, Jen-Wei, additional, Cheng, Osbert, additional, Huang, Cheng-Tung, additional, and Ye, Yi-Han, additional

Published
2020
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12. A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs

Author

Lin, Yun-Hsuan, primary, Lu, Ying-Hsin, additional, Chang, Ting-Chang, additional, Liao, Jih-Chien, additional, Lin, Chein-Yu, additional, Jin, Fu-Yuan, additional, Lin, Yu-Shan, additional, Ciou, Fong-Min, additional, Chang, Yen-Cheng, additional, Chang, Kai-Chun, additional, Hung, Wei-Chun, additional, Chen, Kuan-Hsu, additional, Yeh, Chien-Hung, additional, and Kuo, Ting-Tzu, additional

Published
2019
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