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Your search keyword '"Gallium arsenide -- Optical properties"' showing total 4 results
Start Over Descriptor "Gallium arsenide -- Optical properties" Journal ieee transactions on electron devices
4 results on '"Gallium arsenide -- Optical properties"'

1. A self-aligned InGaAs HEMT architecture for logic applications

Author

Waldron, N., Kim, D-H., and del Alamo, J. A.

Subjects
Gallium arsenide -- Electric properties, Gallium arsenide -- Optical properties, High-electron-mobility transistors -- Design and construction, Indium -- Electric properties, Indium -- Optical properties, Digital integrated circuits -- Design and construction, Very-large-scale integration -- Usage, Programmable logic array, Business, Electronics, Electronics and electrical industries
Published
2010

2. Performance of high-reliability and high-linearity InGaP/GaAs HBT PAs for wireless communication

Author

Tu, M.-C., Ueng, H.-Y., and Wang, Y.-C.

Subjects
Bipolar transistors -- Design and construction, Gallium arsenide -- Electric properties, Gallium arsenide -- Optical properties, Indium -- Electric properties, Indium -- Optical properties, Power amplifiers -- Composition, Power amplifiers -- Design and construction, Reliability (Engineering) -- Analysis, Mobile communication systems -- Analysis, Wireless communication systems -- Analysis, Wireless technology, Business, Electronics, Electronics and electrical industries
Published
2010

3. n-ZnO/n-GaAs heterostructured white light-eEmitting diode: nanoscale interface analysis and electroluminescence studies

Author

Tan, S. T., Zhao, J., Iwan, S., Sun, X. W., Tang, X., Ye, J., Bosman, M., Tang, L., Lo, G.-Q., and Teo, K. L.

Subjects
Electroluminescence -- Analysis, Gallium arsenide -- Electric properties, Gallium arsenide -- Optical properties, Light-emitting diodes -- Design and construction, Light-emitting diodes -- Electric properties, Light-emitting diodes -- Optical properties, Zinc oxide -- Electric properties, Zinc oxide -- Optical properties, Business, Electronics, Electronics and electrical industries
Published
2010

4. Quantitative analysis of dopant distribution and activation across p-n junctions in AlGaAs/GaAs light-emitting diodes using off-axis electron holography

Author

Suk Chung, Johnson, S.R., Ding Ding, Yong-Hang Zhang, Smith, D.J., and McCartney, M.R.

Subjects
Aluminum alloys -- Electric properties, Aluminum alloys -- Optical properties, Electrostatic interactions -- Analysis, Gallium arsenide -- Electric properties, Gallium arsenide -- Optical properties, Holography -- Usage, Light-emitting diodes -- Electric properties, Light-emitting diodes -- Composition, Business, Electronics, Electronics and electrical industries
Abstract

A study was conducted to evaluate the electrostatic potential profile across the p-n junction of an AlGaAs/GaAs light-emitting diode (LED) with linearly graded triangular AlGaAs barriers using off-axis electron holography. Results suggest that electron holography measurements shared with modeling present device designers a helpful tool for analyzing doping profiles in complex heterostructures.

Published
2009

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