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Your search keyword '"High resistivity silicon"' showing total 2 results
Start Over Descriptor "High resistivity silicon" Journal ieee transactions on electron devices
2 results on '"High resistivity silicon"'

1. On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes

Author

G.-F. Dalla Betta, Giovanni Soncini, G. U. Pignatel, Maurizio Boscardin, L. Bosisio, Giovanni Verzellesi, Verzellesi, G., DALLA BETTA, G. F., Bosisio, Luciano, Boscardin, M., Pignatel, G. U., and Soncini, G.

Subjects
High resistivity silicon, Materials science, Silicon, business.industry, Gated diode, Gate length, generation lifetime, high-resistivity silicon, chemistry.chemical_element, Hardware_PERFORMANCEANDRELIABILITY, Carrier lifetime, Electronic, Optical and Magnetic Materials, chemistry, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Hardware_ARITHMETICANDLOGICSTRUCTURES, Electrical and Electronic Engineering, business, Hardware_LOGICDESIGN, Diode
Abstract

We show that in high-resistivity silicon bulk generation lifetime and surface generation velocity can not be measured with acceptable accuracy using a single gated diode, unless the gate length is suitably tailored. The accuracy with which bulk generation lifetime can be evaluated is, in particular, limited by nonidealities, contributing extra components to the gated-diode current, which are not accounted for in the standard extraction procedure.

Published
1999
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2. Reduction of leakage current of large-area high-resistivity silicon p-i-n photodiodes for detection at 1.06 µm

Author

J.Y.-M. Lee

Subjects
Materials science, High resistivity silicon, Silicon, business.industry, Doping, Analytical chemistry, chemistry.chemical_element, Electronic, Optical and Magnetic Materials, Photodiode, law.invention, Reduction (complexity), Ion implantation, chemistry, law, Reverse bias, Electrical resistivity and conductivity, Optoelectronics, Electrical and Electronic Engineering, business
Abstract

An experimental study has been carried out to reduce the leakage current of large-area (>2.5 cm2) high-resistivity (p-type, 8000 to 15 000 Ω . cm) fully depleted silicon p-i-n photodiodes. A new process technology, using low temperature oxidation and utilizing complete implantation doping, has been successfully developed. This process reproducibly gives photodiodes with generation-limited leakage current. The lowest level of leakage current achieved is in the order of 1 µA/cm3per unit depletion volume at 200-V reverse bias.

Published
1981
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