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Your search keyword '"Kim, Jang Hyun"' showing total 11 results
Start Over Author "Kim, Jang Hyun" Journal ieee transactions on electron devices
11 results on '"Kim, Jang Hyun"'

4. Enhancement of Thermal Characteristics and On-Current in GAA MOSFET by Utilizing Al2O3-Based Dual-κ Spacer Structure

Author

Song, Young Suh, Kim, Sangwan, Kim, Jang Hyun, Kim, Garam, Lee, Jong-Ho, and Choi, Woo Young

Abstract

By utilizing the dual- $\kappa $ spacer (DS) technique, a novel structure has been proposed to improve the thermal characteristics and ON-current ( ${I}_{ \mathrm{\scriptscriptstyle ON}}{)}$ in gate-all-around (GAA) MOSFETs. The proposed GAA MOSFET structure utilizes DS, which contains aluminum oxide (Al2O3) as an inner spacer so that the self-heating effect (SHE) could be improved from the high thermal conductivity of Al2O3. To verify the proposed device structure, 3-D technology computer-aided design (TCAD) simulation has been performed through Synopsys Sentaurus tool. As a result, when the DS structure and Al2O3 are utilized in GAA MOSFET, the maximum lattice temperature ( ${T}_{\text {max}}{)}$ is improved from 628 to 509 K, and the thermal resistance ( ${R}_{\text {th}}{)}$ is improved by 49%. According to this thermal improvement, ${I}_{ \mathrm{\scriptscriptstyle ON}}$ and OFF-current ( ${I}_{ \mathrm{\scriptscriptstyle OFF}}{)}$ are also simultaneously improved in the proposed GAA MOSFET. Furthermore, since Al2O3 has lower permittivity than HfO2, the gate capacitance ( ${C}_{\text {gate}}{)}$ could also be improved in the proposed GAA MOSFET. In essence, the proposed GAA MOSFET structure utilizes high thermal conductivity and low permittivity of Al2O3 with DS structure.

Published
2023
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5. Investigation of Self-Heating Effects in Vertically Stacked GAA MOSFET With Wrap-Around Contact.

Author

Kang, Seok Jung, Kim, Jang Hyun, Song, Young Suh, Go, Seungwon, and Kim, Sangwan

Subjects
*SEMICONDUCTOR devices, *THERMAL resistance, *METAL oxide semiconductor field-effect transistors, *COMPUTER-aided design, *LOGIC circuits, *GALLIUM arsenide
Abstract

A contact resistance (${R}_{c}$) becomes a major parasitic resistance in highly scaled modern semiconductor devices. A wrap-around contact (WAC) has been suggested as a promising solution to reduce the ${R}_{c}$ , because its contact area is larger than that for the conventional top contact (TC) structure. Therefore, in this article, the electrical and thermal characteristics are widely investigated in vertically stacked gate-all-around (GAA) MOSFET with a WAC by using a 3-D technology computer-aided design (TCAD) simulation. First, compared with the TC, the WAC shows 1.74 times higher ON-state current. It is attributed in part to the low ${R}_{c}$ and in part to the low source–drain resistance (${R}_{\text {SD}}$). Furthermore, thermal resistance (${R}_{\text {th}}$) is also reduced by 9.73% in WAC, which improves self-heating effects (SHEs). Considering the results, it is expected that the WAC structure could be an attractive candidate to simultaneously improve device performance and reliability. [ABSTRACT FROM AUTHOR]

Published
2022
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