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Start Over Author "Li, Guoli" Journal ieee transactions on electron devices
8 results on '"Li, Guoli"'

3. MoS₂ Nanoribbon Transistor for Logic Electronics

Author

Duan, Xinpei, primary, Yang, Zhenyu, additional, Lin, Jun, additional, Huang, Hao, additional, Li, Guoli, additional, Wan, Da, additional, Zou, Xuming, additional, Bai, Jingwei, additional, Miao, Jinshui, additional, Liao, Lei, additional, and Liu, Xingqiang, additional

Published
2022
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4. Electrical Evolution of p-Type SnOx Film and Transistor Deposited by RF Magnetron Sputtering

Author

Zhou, Yuyan, Song, Yu, Hong, Ruohao, Liu, Xingqiang, Zou, Xuming, Iniguez, Benjamin, Flandre, Denis, Li, Guoli, and Liao, Lei

Abstract

In this work, by altering oxygen partial pressure (OPP) and sputtering power ( ${P}_{\text {RF}}$ ) of the radio frequency (RF) magnetron sputtering process, we investigate electrical evolution of the p-type SnOx film and transistor. Herein, combining device current–voltage (such as ON-state current and field-effect mobility), low-frequency noise (LFN), and gate-bias-stress characteristics, we find that the optimal OPP range is 4.8%–7.2% for the SnOx film deposition at ${P}_{\text {RF}}$ of 70 and 30 W. Based on X-ray photoelectron spectroscopy (XPS), the SnOx films deposited at high power (70 W) show less sensitivity to OPP, which leads to the slow transition of internal Sn2+, Sn4+ states, and a relatively large process window. Furthermore, the defect states inside the SnOx are analyzed. The oxygen interstitials (Oi), as deep acceptors, keep inactive regardless of the external bias. The oxygen vacancies (Vo) and the ionized Vo2+ states, which act as the electron traps, get suppressed and are attributed to the ambipolar behavior in the SnOx transistor, while increasing the OPP. This work benefit lies in a comprehensive analysis of the sputtering process parameters impact on SnOx film and transistor properties and their underlying defects.

Published
2023
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5. MoS 2 Nanoribbon Transistor for Logic Electronics.

Author

Duan, Xinpei, Yang, Zhenyu, Lin, Jun, Huang, Hao, Li, Guoli, Wan, Da, Zou, Xuming, Bai, Jingwei, Miao, Jinshui, Liao, Lei, and Liu, Xingqiang

Subjects
LOGIC circuits, NAND gates, ELECTRONIC materials, LOGIC, TRANSISTORS
Abstract

Tailoring MoS2 into nanoribbon (NR) provides an efficient regulation of the electrical property. Herein, high-performance MoS2 transistors are fabricated by optimizing the channel height, width, and length. The electrical performance of the device is improved due to enhanced gate modulation capability from the quasi-3D channel geometry. The devices obtain a high ON-state current of $496 ~\mu \text{A}\,\cdot \, \mu \text{m}$ −1 while offering appropriate field-effect mobility of 52.6 cm2V−1s−1 as the height and width of MoS2 NR are fixed to 20 ± 3 nm and 130 ± 10 nm, respectively. The high performance and desirable current saturation are promising to construct robust logic gates. The NOT and NAND gates are assembled based on an individual MoS2 NR. The inverters demonstrate a voltage gain of −17.8 and a total noise margin of nearly 75%. This work provides an alternative strategy to fully take the advantage of 2-D materials in logic electronics circuits. [ABSTRACT FROM AUTHOR]

Published
2022
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