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Your search keyword '"Lombardo, Salvatore"' showing total 6 results
Start Over Author "Lombardo, Salvatore" Journal ieee transactions on electron devices
6 results on '"Lombardo, Salvatore"'

1. Nanocrystal memory cell integration in a stand-alone 16-Mb NOR flash device

Author

Gerardi, Cosimo, Ancarani, Valentina, Portoghese, Rosario, Giuffrida, Stella, Bileci, Marco, Bimbo, Gabriella, Brafa, Orazio, Mello, Domenico, Ammendola, Giuseppe, Tripiciano, Elena, Puglisi, Rosaria, and Lombardo, Salvatore A.

Subjects
Nanotechnology -- Research, Flash memory -- Design and construction, Dielectrics -- Electric properties, Flash memory, Business, Electronics, Electronics and electrical industries
Abstract

The full process integration of nano-crystal (NC) memory cells in a stand-alone 16-Mb NOR Flash device is examined. The findings suggest that NC sizes, dispersion and the interpoly dielectric structure are responsible for affecting the electrical performances related to reliability issues.

Published
2007

2. Theory and experiment of suppressed shot noise in stress-induced leakage currents

Author

Iannaccone, Giuseppe, Crupi, Felice, Neri, Bruno, and Lombardo, Salvatore

Subjects
Metal oxide semiconductors -- Research, Electric currents, Vagrant -- Research, Semiconductor device, Business, Electronics, Electronics and electrical industries
Abstract

Research involving an examination of shot noise in metal-oxide-semiconductor (MOS) capacitors is described and discussed.

Published
2003

3. Silicon planar technology for single-photon optical detectors

Author

Sciacca, Emilio, Giudice, Andrea C., Sanfilippo, Delfo, Zappa, Franco, Lombardo, Salvatore, Consentino, Rosario, Di Franco, Cinzia, Ghioni, Massimo, Fallica, Giorgio, Bonanno, Giovanni, Cova, Sergio, and Rimini, Emanuele

Subjects
Optoelectronic devices -- Research, Photon detectors -- Research, Optoelectronic device, Business, Electronics, Electronics and electrical industries
Abstract

A single photon avalanche detector (SPAD) in planar technology is described and discussd.

Published
2003

4. Band-gap narrowing and high-frequency characteristics of Si/Ge(sub x)Si(sub 1-x) heterojunction bipolar transistors formed by Ge ion implantation in Si

Author

Lombardo, Salvatore A., Privitera, Vittorio, Pinto, Angelo, Faust, Frederick, La Rosa, Gregorio, and Campisano, Salvatore U.

Subjects
Bipolar transistors -- Research, Ion implantation -- Usage, Business, Electronics, Electronics and electrical industries
Abstract

A systematic experimental study was conducted on the band-gap narrowing and high-frequency characteristics of Si/Ge(sub x)Si(sub 1-x) heterojunction bipolar transistors (HBT) formed by Ge ion implantation in Si. Results showed that in transistors fabricated by using only ion implantation for emitter and base doping, Ge ion implantation at high doses produces real performance advantages. Thus, Ge implantation is a viable approach to fabricate Si/Ge(sub x)Si(sub 1-x) HBT.

Published
1998

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