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Start Over Author "Lu, Chao" Journal ieee transactions on electron devices
2 results on '"Lu, Chao"'

1. Effect of process variations and ambient temperature on electron mobility at the SiO2/4H-SiC interface

Author

Lu, Chao-Yang, Cooper, James A., Tsuji, Takashi, Chung, Gilyong, Williams, John R., Feldman, Leonard C., and McDonald, Kyle

Subjects
Metal oxide semiconductor field effect transistors -- Analysis, Electron mobility -- Analysis, Semiconductor device, Business, Electronics, Electronics and electrical industries
Abstract

The effect of processing variables on the inversion layer electron mobility of (0001)-oriented 4H-SiC n-channel MOSFETs is reported. The temperature dependence of electron mobility for nitric oxide and non-nitric oxide annealed n-channel MOSFETs is also presented.

Published
2003

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