191 results on '"Meneghesso, Gaudenzio"'
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2. On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs
3. Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors
4. Modeling the Electrical Degradation of Micro-transfer-Printed 845 nm VCSILs for Silicon Photonics
5. Fast Characterization of Power LEDs: Circuit Design and Experimental Results
6. Dynamic Behavior of Threshold Voltage and I D–V DS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect
7. Optically Induced Degradation Due to Thermally Activated Diffusion in GaN-Based InGaN/GaN MQW Solar Cells
8. Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors
9. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
10. Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect
11. Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs
12. Degradation of GaN-Based Multiple Quantum Wells Solar Cells Under Forward Bias: Investigation Based on Optical Measurements and Steady-State Photocapacitance
13. Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
14. Status of Performance and Reliability of 265 nm Commercial UV-C LEDs in 2023
15. Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs
16. Analysis of the role of current, temperature, and optical power in the degradation of InGaN-based laser diodes
17. “Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
18. Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs
19. Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon
20. Reversible degradation of ohmic contacts on p-GaN for application in high-brightness LEDs
21. High-temperature degradation of GaN LEDs related to passivation
22. Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs
23. Trapping and Detrapping Mechanisms in β-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements
24. Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction
25. Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs
26. 30-nm two-step recess gate InP-based InA1As/InGaAs HEMTs
27. On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion
28. Understanding $\gamma$ -Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model
29. Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications
30. Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's by means of electroluminescence
31. Special Issue on Reliability
32. Breakdown Walkout in Polarization-Doped Vertical GaN Diodes
33. On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness
34. High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes
35. Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors
36. Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs
37. Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors
38. “Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs.
39. Understanding γ-Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model.
40. Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs
41. Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs
42. Characterization of Defects in AlGaN/GaN HEMTs Based on Nonlinear Microwave Current Transient Spectroscopy
43. Secondary Electroluminescence of GaN-on-Si RF HEMTs: Demonstration and Physical Origin
44. Defect-Related Degradation of AlGaN-Based UV-B LEDs
45. Investigation of Mobility Transient on Organic Transistor by Means of DLTS Technique
46. Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers
47. Viscoelasticity Recovery Mechanism in Radio Frequency Microelectromechanical Switches
48. Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate
49. Low Frequency Noise and Gate Bias Instability in Normally OFF AlGaN/GaN HEMTs
50. Editorial
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