1. Comprehensive Study of Contact Length Scaling Down to 12 nm With Monolayer MoS2 Channel Transistors
- Author
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Wu, Wen-Chia, Hung, Terry Y. T., Sathaiya, D. Mahaveer, Arutchelvan, Goutham, Hsu, Chen-Feng, Su, Sheng-Kai, Chou, Ang Sheng, Chen, Edward, Shen, Yun-Yang, Liew, San Lin, Hou, Vincent, Lee, T. Y., Cai, Jin, Wu, Chung-Cheng, Wu, Jeff, Wong, H.-S. Philip, Cheng, Chao-Ching, Chang, Wen-Hao, Radu, Iuliana P., and Chien, Chao-Hsin
- Abstract
The 2-D transition metal dichalcogenides (2-D TMDs) have emerged as a promising channel material for postsilicon applications for their ultrathin structure and excellent electrostatic control. However, achieving low contact resistance at scaled contact length remains a challenge. This article overcomes this challenge through optimized deposition of a semimetal/metal stack in monolayer MoS2 channel transistors and obtains a low contact resistance of
$\sim 300 \Omega \cdot \mu \text{m}$ $10^{{13}}\mathrm {cm}^{-{2}}$ - Published
- 2023
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