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Your search keyword '"Tallarico AN"' showing total 13 results
Start Over Author "Tallarico AN" Journal ieee transactions on electron devices
13 results on '"Tallarico AN"'

3. Role of the GaN-on-Si Epi-Stack on ΔRON Caused by Back-Gating Stress

Author

Millesimo, M., Borga, M., Valentini, L., Bakeroot, B., Posthuma, N., Vohra, A., Decoutere, S., Fiegna, C., and Tallarico, A. N.

Abstract

This article reports an in-depth analysis of the ON-resistance drift ( $\Delta {R}_{ \mathrm{\scriptscriptstyle ON}}{)}$ induced by storage/release mechanisms occurring in the buffer of GaN-on-Si power devices. The role of both stress condition (bias, temperature, and stress time) and buffer’s epi-stack composition on $\Delta {R}_{ \mathrm{\scriptscriptstyle ON}}$ has been analyzed by means of back-gating current deep-level transient spectroscopy (I-DLTS). The results reveal two competing mechanisms: 1) a faster one related to acceptor defects and sensitive to the thickness of the carbon-doped GaN back-barrier (C:GaN) and superlattice (SL) layers and 2) a slower one ascribed to hole accumulation at the C:GaN/SL interface, independent of the thickness of the epi-stack. The temperature, stress bias, and stress time dependence of such mechanisms, often overlapping, have been investigated by adopting a genetic algorithm.

Published
2023
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6. ON-State Degradation in AlGaN/GaN-on-Silicon Schottky Barrier Diodes: Investigation of the Geometry Dependence

Author

Enrico Sangiorgi, Andrea Natale Tallarico, Jie Hu, Steve Stoffels, Denis Marcon, Paolo Magnone, Silvia Lenci, Stefaan Decoutere, Claudio Fiegna, Tallarico, Andrea Natale, Magnone, Paolo, Stoffels, Steve, Lenci, Silvia, Hu, Jie, Marcon, Deni, Sangiorgi, Enrico, Decoutere, Stefaan, and Fiegna, Claudio

Subjects
Materials science, Silicon, gated edge termination (GET), anode-cathode spacing length (Lac), Schottky barrier, AlGaN/gallium nitride (GaN) Schottky barrier diode (SBD), electric field distribution, lifetime, ON-resistance (RON), ON-state stress/degradation, Schottky contact length (LSC), turn-ON voltage (VTON), Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, chemistry.chemical_element, Geometry, 02 engineering and technology, 01 natural sciences, Stress (mechanics), Electric field, 0103 physical sciences, Electronic, 0202 electrical engineering, electronic engineering, information engineering, Optical and Magnetic Materials, Diode, 010302 applied physics, Electronic, Optical and Magnetic Material, 020208 electrical & electronic engineering, Wide-bandgap semiconductor, Schottky diode, chemistry, Charge carrier
Abstract

In this paper, we present the results of a combined measurement/simulation analysis of the degradation induced by on-state stress in Au-free AlGaN/gallium-nitride-on-Si Schottky barrier diodes (SBDs). Turn-on voltage ( $V_{\mathrm{ TON}}$ ) and on-resistance ( $R_{\mathrm{\scriptscriptstyle ON}}$ ) are affected by charge carrier trapping/detrapping, occurring in different regions and caused by different mechanisms, when a high stress current is applied to the device. In particular, we have investigated the degradation of SBDs adopting different stress conditions and analyzing the influence of the diode geometry; consequently, we were able to identify the physical mechanisms responsible for long-term degradation of $V_{\mathrm{ TON}}$ and $R_{\mathrm{\scriptscriptstyle ON}}$ . In addition, thanks to this approach, a critical electric field for the $R_{\mathrm{\scriptscriptstyle ON}}$ degradation has been determined.

Published
2016
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10. Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

Author

Hu, Jie, primary, Stoffels, Steve, additional, Lenci, Silvia, additional, De Jaeger, Brice, additional, Ronchi, Nicolo, additional, Tallarico, Andrea Natale, additional, Wellekens, Dirk, additional, You, Shuzhen, additional, Bakeroot, Benoit, additional, Groeseneken, Guido, additional, and Decoutere, Stefaan, additional

Published
2016
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13. PBTI in GaN-HEMTs With p-Type Gate: Role of the Aluminum Content on \Delta V\mathrm {TH} and Underlying Degradation Mechanisms.

Author

Tallarico, Andrea Natale, Stoffels, Steve, Posthuma, Niels, Magnone, Paolo, Marcon, Denis, Decoutere, Stefaan, Sangiorgi, Enrico, and Fiegna, Claudio

Subjects
*IMPACT ionization, *MODULATION-doped field-effect transistors, *THRESHOLD voltage, *ALUMINUM, *QUANTUM tunneling, *STRAY current measurement, *ELECTRIC field strength, *PERCOLATION
Abstract

In this paper, we present an experimental analysis of the degradation induced by positive bias temperature instability stress in GaN-based power high electron mobility transistors with p-type gate, controlled by a Schottky metal/p-GaN junction. In particular, the role of the aluminum content (Al%) in the AlGaN barrier layer on the threshold voltage degradation is investigated by means of constant voltage stress measurements. This has been performed for different process conditions with varying Al content. Main results in this paper demonstrate that when a relatively large positive bias is applied on the gate, two competing trapping mechanisms take place in the AlGaN barrier layer or at the p-GaN/AlGaN interface causing V\text {TH} instability. First, an aluminum independent hole trapping mechanism, caused by elastic tunneling from p-GaN valence band (2-D hole gas), leads to a relatively short-time and recoverable negative V\text {TH} shift. In the second step, defect creation occurs. These additional defects are filled with electrons and cause a permanent or slowly recoverable positive V\text {TH} degradation. The amount of defect creation was dependent on the Al% in the barrier. [ABSTRACT FROM PUBLISHER]

Published
2018
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