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Start Over Author "Tsou YA" Journal ieee transactions on electron devices
3 results on '"Tsou YA"'

2. High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness

Author

Chih-Hao Huang, Schubert S. Chu, Huang-Siang Lan, Tsou Ya-Jui, Yi-Chiau Huang, Hua Chung, Satheesh Kuppurao, Chorng-Ping Chang, Chee-Wee Liu, Chih-Hsiung Huang, and Yu-Shiang Huang

Subjects
010302 applied physics, Materials science, Silicon, business.industry, Scattering, Oxide, chemistry.chemical_element, 02 engineering and technology, Chemical vapor deposition, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Effective mass (solid-state physics), chemistry, 0103 physical sciences, MOSFET, Electronic engineering, Surface roughness, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Quantum well
Abstract

The high peak mobility of 509 cm2/ $\text {V}\cdot \text {s}$ of the chemical vapor deposition -grown GeSn pMOSFETs is obtained using 1-nm Ge cap. The Ge cap on GeSn can reduce the scattering of oxide/interface charges and surface roughness for the holes in the GeSn quantum wells. However, the thick cap induces holes in the Ge cap itself, leading lower mobility than GeSn channels. The on current is enhanced by external stress due to the effective mass reduction. The normalized noise power density of the GeSn devices decreases with increasing Ge cap thickness, indicating the carrier number fluctuation and correlated mobility fluctuation are suppressed when the holes are away from interface.

Published
2017

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