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Your search keyword '"Wu, Pei-Yu"' showing total 8 results
Start Over Author "Wu, Pei-Yu" Journal ieee transactions on electron devices
8 results on '"Wu, Pei-Yu"'

1. Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation

Author

Wang, Yu-Bo, primary, Chang, Ting-Chang, additional, Lin, Shih-Kai, additional, Wu, Pei-Yu, additional, Zhang, Yong-Ci, additional, Tan, Yung-Fang, additional, Chen, Wen-Chung, additional, Wu, Chung-Wei, additional, Chou, Sheng-Yao, additional, Zhou, Kuan-Ju, additional, Sun, Li-Chuan, additional, Tsai, Xin-Ying, additional, and Sze, Simon M., additional

Published
2022
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4. Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT With Al 2 O 3 /Si 3 N 4 Gate Insulator Under Hot Switching.

Author

Wu, Pei-Yu, Tsai, Xin-Ying, Chang, Ting-Chang, Yeh, Yu-Hsuan, Huang, Wei-Chen, Chang, Kai-Chun, Tsai, Tsung-Ming, and Huang, Jen-Wei

Subjects
*MODULATION-doped field-effect transistors, *ALUMINUM oxide, *INDIUM gallium zinc oxide, *IMPACT ionization, *WIDE gap semiconductors, *GALLIUM nitride, *METAL insulator semiconductors
Abstract

As a transmitter power amplifier (PA), the electrical output characteristics of gallium nitride (GaN) high electron mobility transistors (HEMTs) are closely related to the drain current versus drain voltage (${I}_{d}$ – ${V}_{d}$) characteristics. Any abnormalities in the ${I}_{d}$ – ${V}_{d}$ characteristics will seriously affect device performance. Therefore, many groups have investigated the kink effect of GaN HEMTs. One of the commonly used measurement methods of the kink effect is the ${I}_{d}$ – ${V}_{d}$ forward and reverse sweep. In this study, we used the same method for Al2O3/Si3N4–AlGaN/GaN metal–insulator–semiconductor HEMT (MIS HEMT) devices. We found that not only did the kink effect occurred but ${I}_{d}$ also increased abnormally during the reverse sweep and after a series of electrical measurements. At the end of the forward sweep, impact ionization caused by a high ${V}_{d}$ generated electron–hole pairs and some holes accumulated under the gate region, which caused the negative shift of the threshold voltage (${V}_{\text{Th}}$), leading to an abnormal increase in ${I}_{d}$ during the reverse sweep. [ABSTRACT FROM AUTHOR]

Published
2022
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5. Forming-Free HfO2-Based Resistive Random Access Memory by X-Ray Irradiation

Author

Wang, Yu-Bo, Chang, Ting-Chang, Lin, Shih-Kai, Wu, Pei-Yu, Zhang, Yong-Ci, Tan, Yung-Fang, Chen, Wen-Chung, Wu, Chung-Wei, Chou, Sheng-Yao, Zhou, Kuan-Ju, Sun, Li-Chuan, Tsai, Xin-Ying, and Sze, Simon M.

Abstract

This work proposes forming-free HfO2-based resistance random access memory (RRAM) using X-ray irradiation which overcomes the bottleneck of the conventional forming process, that of the need for a larger forming voltage with scaling. In addition, a large irradiation area is beneficial to the mass production of memory devices. This forming-free device has a better memory window compared to the device without X-ray irradiation. Moreover, the forming-free device has good reliability as the device without X-ray irradiation. To analyze the physical mechanism, the conduction mechanism was investigated by the current-fitting technique, and irradiation experiments with varying X-ray energies and times were performed. Finally, a physical model is proposed to explain the mechanism of the forming-free RRAM from X-ray irradiation.

Published
2022
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6. Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory

Author

Lin, Shih-Kai, primary, Wu, Cheng-Hsien, additional, Chang, Ting-Chang, additional, Lien, Chen-Hsin, additional, Yang, Chih-Cheng, additional, Chen, Wen-Chung, additional, Lin, Chun-Chu, additional, Huang, Wei-Chen, additional, Tan, Yung-Fang, additional, Wu, Pei-Yu, additional, Zhang, Yong-Ci, additional, Sun, Li-Chuan, additional, and Sze, Simon M., additional

Published
2021
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7. Improvement of Hafnium Oxide Resistive Memory Performance Through Low-Temperature Supercritical Oxidation Treatments

Author

Wu, Pei-Yu, primary, Chang, Ting-Chang, additional, Chen, Min-Chen, additional, Yang, Chih-Cheng, additional, Zheng, Hao-Xuan, additional, Chen, Po-Hsun, additional, Chen, Wen-Chung, additional, Zhang, Yong-Ci, additional, Lin, Shih-Kai, additional, Chen, Jian-Jie, additional, Huang, Hui-Chun, additional, Tsai, Tsung-Ming, additional, and Sze, Simon M., additional

Published
2021
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