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Your search keyword '"Zhao, Qing-Tai"' showing total 12 results
Start Over Author "Zhao, Qing-Tai" Journal ieee transactions on electron devices
12 results on '"Zhao, Qing-Tai"'

7. Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs

Author

Blaeser, Sebastian, primary, Glass, Stefan, additional, Schulte-Braucks, Christian, additional, Narimani, Keyvan, additional, von den Driesch, Nils, additional, Wirths, Stephan, additional, Tiedemann, Andreas T., additional, Trellenkamp, Stefan, additional, Buca, Dan, additional, Mantl, Siegfried, additional, and Zhao, Qing-Tai, additional

Published
2016
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11. Fabrication and Characterization of Enhancement-Mode High-\kappa~LaLuO3-AlGaN/GaN MIS-HEMTs.

Author

Yang, Shu, Huang, Sen, Schnee, Michael, Zhao, Qing-Tai, Schubert, Jrgen, and Chen, Kevin J.

Subjects
ALUMINUM gallium nitride, MODULATION-doped field-effect transistors, GALLIUM nitride, LOGIC circuits, THRESHOLD voltage, ELECTRODES
Abstract

In this paper, we investigate the enhancement-mode (E-mode) LaLuO3 (LLO)-AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) fabricated using fluorine (F) plasma ion implantation with a gate-dielectric-first planar process. The E-mode MIS-HEMTs exhibit a threshold voltage (VTH) of 0.6 V, a peak transconductance of \sim193~mS/mm, a small hysteresis of 0.04 V in linear region characterized by a pulse-mode current-voltage measurement, and significantly suppressed current collapse under high-drain-bias switching conditions. X-ray photoelectron spectroscopy and secondary ion mass spectrometry analyses manifest that the negatively charged F ions penetrating into the (Al)GaN barrier layer serve as the primary VTH modulation mechanism, whereas the F ions in the fluorinated LLO film form chemical bonds with La/Lu atoms and become charge-neutral. The suppressed current collapse is verified as an advantageous byproduct of the F plasma ion implantation that also fluorinated the SiNx sidewalls in the vicinity of the gate electrode, and therefore, suppress electron injection to the gate-drain access region. [ABSTRACT FROM AUTHOR]

Published
2013
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12. Experimental Investigation on Alloy Scattering in sSi/Si0.5Ge0.5/sSOI Quantum-Well p-MOSFET.

Author

Yu, Wenjie, Wu, Wangran, Zhang, Bo, Liu, Chang, Sun, Jiabao, Zhai, Dongyuan, Yu, Yuehui, Wang, Xi, Shi, Yi, Zhao, Yi, and Zhao, Qing-Tai

Subjects
METAL oxide semiconductor field-effect transistor circuits, SILICON germanium integrated circuits, TRANSISTORS, LOGIC circuits, HOLE mobility, QUANTUM well devices
Abstract

Alloy scattering in a sSi/Si0.5Ge0.5/strained Silicon on Insulator (SOI) (sSOI) quantum-well (QW) p-MOSFET is investigated by hole density modulation through applying back-gate biases. The hole mobility under negative back-gate biases is found degraded by intensified alloy scattering at low electrical field because more holes are distributed in the bulk Si0.5Ge0.5. At higher electrical field, the higher density of holes populated at the Si/Si0.5Ge0.5.interface and less holes in the bulk Si0.5Ge0.5.result in less pronounced alloy scattering, leading to mobility enhancement under negative back-gate biases. This confirms experimentally that alloy scattering does not play a significant role in the hole mobility of sSi/Si0.5Ge0.5/sSOI QW p-MOSFETs under normal operating mode. [ABSTRACT FROM PUBLISHER]

Published
2014
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