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Your search keyword '"Zhou, Jianjun"' showing total 12 results
Start Over Author "Zhou, Jianjun" Journal ieee transactions on electron devices
12 results on '"Zhou, Jianjun"'

3. Characterization of Current Collapse and Enhancement of Hydrogen-Terminated Diamond MOSFET Due to Long-Term Trapping Effects

Author

Jia, Yonghao, Xu, Yuehang, Yu, Xinxin, Chen, Zhihao, Fu, Yu, Zhou, Jianjun, Kong, Yuechan, Chen, Tangsheng, and Lu, Wei-Bing

Abstract

In this article, the current collapse (CC) and current enhancement (CE) of the hydrogen-terminated diamond (H-diamond) MOSFET are found. The nonmonotonic variation of the drain current (DC) due to the long-term trapping effects is characterized by a proposed method, which involves the transient current measurements and the energy-level extractions. Based on the method, the measured transient current is utilized to infer that the abnormal phenomena are caused by the combined effect of the trapping near the gate and the absorption of atmospheric components on the surface of the device. With the extracted energy levels, the CC is deduced to be induced by the surface trap. The energy diagram for the surface trap in the H-diamond is given to make the trapping mechanism more clearly. By changing the test atmosphere, the CE is found to be caused by the component of the air. This work is useful for improving the performance of the H-diamond device.

Published
2024
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4. Hydrogen-Terminated Diamond Field-Effect Transistors With 1011 ON/ OFF Ratio Using an Al2O3/HfO2 Stacked Passivation Layer

Author

Chen, Zhihao, Yu, Xinxin, Mao, Shuman, Zhou, Jianjun, Kong, Yuechan, Chen, Tangsheng, Xu, Ruimin, Yan, Bo, and Xu, Yuehang

Abstract

Diamond-based devices with high ON/ OFF ratio are promising candidates for power and sensor applications. However, the limited ON/ OFF ratio caused by relatively high leakage currents still remains to be a problem. Herein, we present hydrogen-terminated diamond metal–insulator–semiconductor field-effect transistors (MISFETs) with a 40-/100-nm aluminum oxide/hafnium dioxide stacked passivation layer to reduce leakage currents. Due to the stacked passivation layer, the fringing capacitances were introduced and the electric field at the drain edge of the gate was reduced. Encouragingly, the drain and gate leakage currents were reduced to the order of $10^{-{9}}$ mA/mm under OFF-state conditions at room temperature. Consequently, an ON/ OFF ratio of $\sim 1\times 10^{{11}}$ was achieved, which is the highest value among the previously reported diamond-based field-effect transistors (FETs). Moreover, a record ON/ OFF ratio of $\sim 5\times 10^{{9}}$ was obtained even at 200 °C. Results of this work can pave the way for diamond-based devices in power or sensor applications.

Published
2024
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11. 1.26 W/mm Output Power Density at 10 GHz for Si 3 N 4 Passivated H-Terminated Diamond MOSFETs.

Author

Yu, Xinxin, Hu, Wenxiao, Zhou, Jianjun, Wu, Yun, Tao, Ran, Liu, Bin, Tao, Tao, Wei, Zhongxia, Kong, Yuechan, Ye, Jiandong, Li, Zhonghui, Chen, Tangsheng, and Zheng, Youdou

Subjects
METAL oxide semiconductor field-effect transistors, FIELD-effect transistors, METAL oxide semiconductor field, POWER density, DIAMONDS, FREQUENCIES of oscillating systems
Abstract

In this article, the hydrogen-terminated diamond metal-oxide-semiconductor field effect transistors (MOSFETs) which can operate at high frequency of 10 GHz are demonstrated. The devices were fabricated with a 50 nm Al2O3 gate insulator and a 350 nm Si3N4 passivation layer, which is compatible with the process of monolithic microwave-integrated circuits (MMICs). The device with gate length of 0.35 $\mu \text{m}$ shows a high drain current density of −561 mA/mm. The RF small signal characteristics and power output performances at 10 GHz for the devices with different gate widths have been investigated. With the gate width increased from 100 to 200 $\mu \text{m}$ , the extrinsic maximum frequency of oscillation ${f} _{\text {max}}$ is slightly decreased from 23 to 21 GHz, whereas the output power density at 10 GHz is improved from 1.05 to 1.26 W/mm, with associated power added efficiency increased from less than 5% to 20.77%. Comparing with the devices fabricated by the self-aligned gate process, the power output performance is significantly improved, indicating it is a promising method to fabricate high power and high frequency diamond MOSFETs by using the thick Si3N4 passivation technique. [ABSTRACT FROM AUTHOR]

Published
2021
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