Search

Your search keyword '"Zhu, Wenjuan"' showing total 7 results
Start Over Author "Zhu, Wenjuan" Journal ieee transactions on electron devices
7 results on '"Zhu, Wenjuan"'

1. Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With $\sim$140-nm Gate Length

Author

Islam, Ahmad E., primary, Sepelak, Nicholas P., additional, Miesle, Adam T., additional, Lee, Hanwool, additional, Snure, Michael, additional, Nikodemski, Stefan, additional, Walker, Dennis E., additional, Miller, Nicholas C., additional, Grupen, Matt, additional, Leedy, Kevin D., additional, Liddy, Kyle J., additional, Crespo, Antonio, additional, Hughes, Gary R., additional, Zhu, Wenjuan, additional, Poling, Brian, additional, Tetlak, Stephen, additional, Chabak, Kelson D., additional, and Green, Andrew J., additional

Published
2024
Full Text
View/download PDF

2. Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Author

Islam, Ahmad E., Sepelak, Nicholas P., Miesle, Adam T., Lee, Hanwool, Snure, Michael, Nikodemski, Stefan, Walker, Dennis E., Miller, Nicholas C., Grupen, Matt, Leedy, Kevin D., Liddy, Kyle J., Crespo, Antonio, Hughes, Gary R., Zhu, Wenjuan, Poling, Brian, Tetlak, Stephen, Chabak, Kelson D., and Green, Andrew J.

Abstract

High temperature (HT) electronics applications will require the development of a broad range of devices made using different materials. Among these devices, high-electron mobility transistors (HEMTs) made with GaN and its alloys are attractive for high-power radio frequency (RF) applications. In this manuscript, we tested AlGaN/GaN HEMT devices having ~140-nm gate length at different temperatures up to 500 °C. Devices were fabricated using Air Force Research Laboratory’s (AFRL’s) 140-nm ${T}$ -gate process technology. The performance degradation measured in different devices was analyzed by considering changes in different device parameters and by using appropriate device physics. Cross-sectional materials characterization using scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) was performed to understand the origin of performance degradation. This understanding will allow us to design a sub- $\mu \text{m}$ GaN-based process technology compatible with HT RF applications.

Published
2024
Full Text
View/download PDF

5. Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics

Author

Zhu, Wenjuan, Jin-Ping Han, and Ma, T. P.

Subjects
Dielectrics -- Analysis, Dielectrics -- Influence, Metal oxide semiconductor field effect transistors -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

The accurate measurements and degradation mechanism of the channel mobility for MOSFETs with HfO2 as the gate dielectric is systematically studied. The error in mobility extraction caused by a high density of interface traps for a MOSFET with high-k gate dieletric is also analyzed.

Published
2004

Catalog

Books, media, physical & digital resources
See catalog results