1. An Accurate Capacitance-Voltage Measurement Method for Highly Leaky Devices Part II.
- Author
-
Wang, Y., Cheung, Kin P., Choi, R., and Lee, B.-H.
- Subjects
- *
ELECTROMAGNETIC measurements , *MATHEMATICAL statistics , *ERROR analysis in mathematics , *CAPACITORS , *NUMERICAL analysis , *INSTRUMENTAL variables (Statistics) , *TIME-domain analysis , *TIME-domain reflectometry - Abstract
In Part I an accurate C-V measurement based on time-domain reflectometry (TDR) for MOS capacitors in the presence of a high level of leakage across the gate dielectric was presented. This new method is expected to have high accuracy even in the presence of a very high level of leakage current. In this paper, the basic TCR-based C-V measurement is extended to handle the parasitic, allowing the overlap capacitance to be extracted simultaneously and accurately without the need for additional measurement. In addition, a detailed error analysis is provided to complete the description of the TDR C-V measurement method. [ABSTRACT FROM AUTHOR]
- Published
- 2008
- Full Text
- View/download PDF