201. Comparative Analysis on Conducted CM EMI Emission of Motor Drives: WBG Versus Si Devices.
- Author
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Han, Di, Li, Silong, Wu, Yujiang, Choi, Wooyoung, and Sarlioglu, Bulent
- Subjects
COMPARATIVE studies ,GALLIUM nitride ,MOTOR drives (Electric motors) ,ELECTROMAGNETIC interference ,ELECTROMAGNETIC noise - Abstract
Silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron mobility transistors are perceived as future replacements for Si IGBTs and MOSFETs in medium- and low-voltage drives due to their low conduction and switching losses. However, it is widely believed that the already significant conducted common-mode (CM) electromagnetic interference (EMI) emission of motor drives will be further exacerbated by the high-speed switching operation of these new devices. Hence, this paper investigates and quantifies the increase in the conducted CM EMI emission of a pulse width modulation inverter-based motor drive when SiC and GaN devices are adopted. Through an analytical approach, the results reveal that the influence of dv/dt on the conducted CM emission is generally limited. On the other hand, the influence of switching frequency is more significant. Lab tests are also conducted to verify the analysis. [ABSTRACT FROM PUBLISHER]
- Published
- 2017
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