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This paper proposes a solid-state pulsed power modulator (PPM) with fast rising/falling time and high repetition rates to drive pockels cells. Since the proposed circuit is based on the modular structure using silicon carbide (SiC) metal–oxide silicon field-effect transistors (MOSFETs) for bypass devices as well as for main switches, it can achieve fast switching speed and high reliability. In addition, by a control scheme employing the voltage difference, the proposed circuit can accomplish a high repetition rate and short pulsewidth. Design and implementation of 1.8-kV PPMs with repetition rate of 1 MHz and rising/falling time below 6 ns are presented. Also, important issues for the practical use of the SiC-based PPM are discussed. Experimental results from the developed PPMs are shown to verify the proposed works. [ABSTRACT FROM AUTHOR]

This study presents a simplified design for a solid state pulsed power modulator (SSPPM) based on a power cell structure. Similar to the Marx generator, the power cell structure has advantages such as reliability and modularity. In addition, the proposed SSPPM includes a capacitor charger that is simple and compact. The operating principle of, and the design considerations taken for, the SSPPM are discussed from a practical viewpoint. Based on a reasonable approximation, simplified design equations are developed for a capacitor charger and a high-voltage pulse-switching part, which are comprised of an LCC resonant converter and a power stage, respectively. Accordingly, detailed design procedures are proposed to develop the SSPPM with the following specifications: 40 kV, 20 A, 300 μs, 200 Hz, and 50 kW. The experimental results verify the specifications at the rated operating condition with an efficiency of 92.4%, and also confirm reliable arc-protection performance. Finally, the proposed design methodology, which utilizes simplified equations, can be used for designing an SSPPM based on the power cell structure for extensive applications. [ABSTRACT FROM PUBLISHER]