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Gallium-nitride-field-effect transistors (GaN-FETs) are promising switching devices with fast switching capability. However, they commonly have low gate threshold voltage, suffering from susceptibility to the false triggering. Particularly, the oscillatory false triggering, i.e., a self-sustaining repetitive false triggering, can occur after a fast switching, which is a severe obstacle for industrial applications. The purpose of this paper is to elucidate the design instruction for preventing this phenomenon. The oscillatory false triggering is known to be caused by the parasitic oscillator circuit formed of a GaN-FET, its parasitic capacitance and the parasitic inductance of the wiring. This paper analyzed the nonoscillatory condition of this oscillator. The result revealed an appropriate ratio between the gate-drain capacitance and the common-source inductance is a key to prevent the oscillatory false triggering. Experiment successfully verified this analysis result, supporting the effectiveness of the appropriate design of this ratio for preventing the oscillatory false triggering. [ABSTRACT FROM AUTHOR]