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Dynamic operational behavior (DOB) of electrical machines can cause effects that are difficult to describe and understand. The short-circuit behavior (SCB) in particular is a dangerous DOB for machine and human. It could destroy the machine itself and cause heavy damage to the power supply unit and mechanical coupling components. Analytical calculation of the SCB is simplified and thus not highly accurate. Therefore, the finite element method simulation of the SCB is an important tool for understanding these effects without the danger of damaging the machine by experiments. In this paper, a suitable field formulation, modeling details, and simulation methods for dynamic analysis of synchronous machines are presented in detail. In particular, the accuracy of 2-D and 3-D transient electromagnetic simulations is analyzed by comparison against the available measurements performed on a chosen testing salient pole synchronous machine under the conditions of three-phase, two-phase, and single-phase short circuit. [ABSTRACT FROM AUTHOR]

In this paper, one proposes a model-assisted probability of detection approach to study the reliability of detecting special defects. The approach is based on a 3-D finite-element T– $\Omega $ formulation with circuit coupling. This model is then applied to calculate performances of induction thermography method to detect thin open cracks in vessel reactor shell in nuclear installation. [ABSTRACT FROM AUTHOR]

In this paper, a new behavioral modeling approach for magneto-static hysteresis is presented. Many accurate models are currently available, but none of them seems to be able to correctly reproduce all the possible $B$ – $H$ paths with low computational cost. By contrast, the approach proposed in this paper is based on simple functions, which do not require calculus to be involved, thus assuring a very good efficiency in the algorithm. In addition, the proposed method enables initial magnetization curves, symmetric loops, minor loops, normal curves, and reversal curves of any order to be reproduced, as demonstrated through the pertinent results provided in this paper. A model example based on the proposed modeling technique is also introduced and used as inductor core, in order to simulate an $LR$ series circuit. Finally, the model ability to emulate hysteretic inductors is proved by the satisfactory agreement achieved when comparing the measured and simulated results. [ABSTRACT FROM AUTHOR]

In this paper, a fast H(M) magnetostatic hysteresis model is presented, tested, and used in Simulink and partial element equivalent circuit (PEEC) environments. The model is primarily designed to achieve full compatibility with the current 3-D PEEC formalism for nonlinear isotropic magnetic materials, compatibility not met by any direct model. The capabilities of the proposed model are shown in stand-alone configuration and as a core of circuit components within the Simulink environment. Its effectiveness in the 3-D PEEC formulation is then demonstrated. [ABSTRACT FROM AUTHOR]

In this paper, a broadband equivalent node-to-node admittance functions (NAFs) model for shielded power cables are presented aiming at the direct time-domain simulation. The finite-element method is employed to obtain the frequency-dependent per-unit-length resistances, self- and mutual-inductances, and the self- and mutual-capacitances of the power cables. The matrix rational approximations are then applied to obtain the rational model (in pole-residue form) of the terminal admittance matrix of the multi-conductor transmission line (MTL) model. Next, the numerical stability of the rational model is guaranteed by the terminal (port) passivity enforcement technique. The circuit representation of the equivalent NAFs of the full cable with the length of interest can be synthesized based on the pole-residue description. It is validated by comparing the frequency response with the one computed by applying the original MTL model. [ABSTRACT FROM AUTHOR]

To eliminate the inefficiencies of the existing physics-based planar-gate insulated gate bipolar transistor (IGBT) model without considering an arbitrary free-carrier injection condition and 2-D effects at the MOS end of the drift region in the transient performance simulations, a coupled circuit-ambipolar diffusion equation model and its numerical solution methodology is proposed. Moreover, the proposed model treads the nonlinearity in a complete transient manner. The accuracy of the proposed model is validated by comparing the computed results with both experimental ones and those of an existing model. [ABSTRACT FROM AUTHOR]