1. Magnetoresistance of Ferromagnetic Point Junctions From Tunneling to Direct Contact Regimes.
- Author
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Pandana, H., Gan, L., Dreyer, M., Krafft, C., and Gomez, R. D.
- Subjects
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MAGNETORESISTANCE , *MAGNETIC fields , *GALVANOMAGNETIC effects , *ELECTRIC resistance , *FERROMAGNETIC materials , *SPIN valves - Abstract
The behavior of magnetoresistance in NiFe (permalloy) point junctions was investigated using an STM set-up, where the junction resistance was continuously varied from 108 Ω-10³ Ω. Our results reveal an enhancement of magnetoresistance of more than 80% at one conductance quantum, and the decaying magnetoresistance as one moves away from 12.9 kΩ to either the diffusive regime or the tunneling regime, as supported by independent theories on spin-dependent transport. The suppression of magnetoresistance with incorporation of a 35-nm-thick Au barrier was observed, as well as the dependence of magnetoresistance on the relative orientations of the electrodes. [ABSTRACT FROM AUTHOR]
- Published
- 2004
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