Search

We studied the permanent effects of heavy-ion strikes on decananometer triple-gate SOI devices. We highlighted the role of the geometry and the three-dimensional architecture in the response to heavy ions. Heavy-ion strikes in state-of-the-art Triple-Gate FETs may have measurable permanent effects, due to microdose in the buried oxide, breakdown of the gate oxide, or interface state generation in the side oxide/body interface. This last effect is particularly interesting since it is related to the verticality of multigate transistors. Index Terms--Breakdown, heavy ions, microdose, multigate device (MuGFET), triple-gate SOI FETs.

We present new results on electrostatic discharges in fully depleted SOI MOSFETs struck by heavy ions. We investigate the sensitivity of irradiated MOSFETs to discharges applied both at the gate and drain terminals. A single heavy-ion strike is shown to reduce the ESD breakdown voltage and enhance the probability of generating source-drain filaments for gate ESD events, while leaving the sensitivity to drain events unchanged. Radiation-induced latent damage in the gate oxide and defects in the silicon body are pointed out as possible reasons for the modified response to electrostatic discharges after irradiation. Index Terms--CMOS, ESD, radiation effects, SOI.

In this work, we analyzed the effects of alpha and ultraviolet irradiation on encapsulated and non-encapsulated thin-film-transistors. Up to -35\% mobility variation occurs on unencapsulated devices after UV irradiation. The same UV irradiation induced less than -3\% on encapsulated devices. By investigating the charge trapping kinetics, we show that the increased robustness comes from the reduced air absorption, rather than solely attenuating UV the components. [ABSTRACT FROM AUTHOR]