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Start Over Author "Ying, Hanbin" Journal ieee transactions on nuclear science
5 results on '"Ying, Hanbin"'

2. Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

Author

Teng, Jeffrey W., primary, Nergui, Delgermaa, additional, Parameswaran, Hari, additional, Sepulveda-Ramos, Nelson E., additional, Tzintzarov, George N., additional, Mensah, Yaw, additional, Cheon, Clifford D., additional, Rao, Sunil G., additional, Ringel, Brett, additional, Gorchichko, Mariia, additional, Li, Kan, additional, Ying, Hanbin, additional, Ildefonso, Adrian, additional, Dodds, Nathaniel A., additional, Nathan Nowlin, R., additional, Zhang, En Xia, additional, Fleetwood, Daniel M., additional, and Cressler, John D., additional

Published
2021
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3. Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation.

Author

Teng, Jeffrey W., Nergui, Delgermaa, Parameswaran, Hari, Sepulveda-Ramos, Nelson E., Tzintzarov, George N., Mensah, Yaw, Cheon, Clifford D., Rao, Sunil G., Ringel, Brett, Gorchichko, Mariia, Li, Kan, Ying, Hanbin, Ildefonso, Adrian, Dodds, Nathaniel A., Nowlin, R. Nathan, Zhang, En Xia, Fleetwood, Daniel M., and Cressler, John D.

Subjects
PIN diodes, GEOSTATIONARY satellites, FAST neutrons, METEOROLOGICAL satellites, X-rays, IRRADIATION
Abstract

Integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO2) and 14-MeV fast neutrons up to a fluence of $2.2\,\,\boldsymbol {\times }\,\,10\,\,^{\mathrm{ 13}}$ cm−2. Changes in both dc leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose (TID) is shown to be suppressed by non-quasi-static (NQS) effects during radio frequency (RF) operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using technology computer-aided design (TCAD) simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites. [ABSTRACT FROM AUTHOR]

Published
2022
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4. Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology

Author

Zeinolabedinzadeh, Saeed, primary, Ulusoy, Ahmet C., additional, Inanlou, Farzad, additional, Ying, Hanbin, additional, Gong, Yunyi, additional, Fleetwood, Zachary E., additional, Roche, Nicolas J.-H., additional, Khachatrian, Ani, additional, McMorrow, Dale, additional, Buchner, Stephen P., additional, Warner, Jeffrey H., additional, Paki, Pauline, additional, and Cressler, John D., additional

Published
2017
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