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This paper discusses a novel methodology to increase the voltage droop compensation range in generalized solid-state bipolar high-voltage Marx modulators with one resonant stage. To maintain the modularity characteristic of bipolar Marx modulators, the imbedding of additional resonant stages is not straightforward. Nevertheless, this paper proposes to add a second resonant stage to the already existing resonant-type voltage droop compensation stage. This second stage increases the voltage droop compensation percentage of a generalized solid-state bipolar Marx generator. The compensation of the bipolar pulse voltage droop is now achieved by adding two auxiliary synchronous compensation resonant voltages, to the output capacitive decaying voltage. Simulation and experimental results are presented for six Marx plus two resonant stages, 16% voltage droop, with 3-kV pulse amplitude, 100- $\mu \text{s}$ pulsewidth, 40-ms relaxation time, and 10-Hz pulse repetition rate. [ABSTRACT FROM AUTHOR]

In this paper, a compact circuit topology is presented for pulsed power generation with a semiconductor opening switch (SOS). Such circuits require the generation of a fast forward current through the diode, followed by a reverse current that activates the recovery process. In general, magnetic switches are used to switch the diode current from forward to reverse. Therefore, adjustment of the output voltage of an SOS pulser is difficult. This paper introduces a circuit that allows an adjustable output voltage of the pulser. A solution is realized with a premagnetizing circuit on the primary winding of a pulse transformer (PT), so that a third winding is not needed. The primary capacitor voltage can now be varied while maintaining proper saturation of the PT. [ABSTRACT FROM PUBLISHER]

Amorphous magnetic core has been widely used in pulsed power technology with applications including plasma science research, high-power microwave generation, and material surface treatment. For different applications, dynamic properties of the magnetic core will vary with stimulated magnetic field which determines by magnetization time and waveform of the driving voltage. In this paper, toroidal amorphous magnetic core ($\Phi ~540$ – $740\times25$ mm) was investigated theoretically, numerically, and experimentally. Specifically, the circuit is analyzed. A high-voltage test stand, which can generate different driving voltages with same components, was designed and developed in our laboratory. Dynamic properties, including magnetic induction change, coercive force and losses, were studied under three different typical waveforms with the same magnetic flux. Driving voltages of the pulses were 12, 12, and 6 kV and the magnetization rates were 0.6, 1.2, and 0.6 T/ $\mu \text{s}$ , respectively. Experimental results show reasonable agreement with the numerical analysis. [ABSTRACT FROM AUTHOR]

The series configuration of fast semiconductor switches seems to be the key component in the high-voltage and fast rising time pulse generation. In this approach, two important issues must be considered. The first is to provide a safe operating condition for the switches in transient intervals. The second is to design a gate drive system with the capability of driving a large number of discrete devices simultaneously. The aim of this paper is to obviate these two requirements. First, different factors affecting the unbalanced voltage sharing between the series switches are discussed. In this investigation, the switch-to-ground parasitic capacitance effect has been recognized as the major effect on the unbalanced voltage sharing in the transient interval. Two schemes for abating this effect are proposed. To solve the unbalanced voltage distribution, the structure with a snubber circuit in the clamp mode operation is suggested. This scheme can be used for any number of switches without destructively affecting their behavior. In addition, the output pulse with a fast rising time could be obtained by the proposed gate drive system. In order to evaluate the operation of the proposed structure, a stacked switch with the voltage capability of 36 kV is tested experimentally. The characteristics of the obtained pulse are the fast rising time (69.5 ns) with the dV/dt of 460 kv/ \mu \texts and the wide range of the pulsewidth adjusting to 0.5–15 \mu \texts . In addition, the voltage variance of the switches level in the series structure is about 10%. [ABSTRACT FROM AUTHOR]

This paper details the experimental evaluation and simulation of a 4-kV n-type gate turn-OFF thyristor (GTO) designed for pulsed power applications. The primary criteria of evaluation are rate of current rise ( dI/dt ), turn-ON delay time ( T_{D}) , and resistance of the device during turn-ON transients [ R_{\mathrm{\scriptscriptstyle ON}}(t)$ ]. The device under test (DuT) is an n-type asymmetric-blocking GTO manufactured by Silicon Power (Part No. 14N40A10) with a rated dc blocking voltage of 4 kV. A test circuit was specifically designed to minimize stray inductance in order to capitalize on the dI/dt$ capabilities of the DuT. Experimental data collected from resistance measurements are used to develop a single-switch approximate model for use in simulation. The results of dI/dt$ experiments provide a profile of DuT dI/dt$ operation beyond rated values; specifically dI/dt were readily achieved. The turn-ON delay time of the DuT is also characterized and determined to be $\sim 225$ ns on average. [ABSTRACT FROM AUTHOR]

It is difficult to design a standard gate driver for optimal switching control of a static induction thyristor (SI-Thy) because of its unique internal structure and the direct commutation switching characteristic between the gate and cathode terminals during the transient turn-on and turn-off switching phases. Therefore, it is important to develop a simple and effective gate driver for achieving optimal fast turn-on and stable switching operations in an SI-Thy under hard-switching conditions. To achieve faster turn-on switching time with shorter gate delay time, impedance matching between the SI-Thy and the turn-on driving circuit component in the gate driver can be realized with additional circuit modification through this paper. To ensure higher stabilities in the turn-off switching phase, forced commutation techniques and additional auxiliary circuits in the gate driver have been devised to suppress the latchup and to eliminate potential ringing possibility. We have demonstrated that our designed and tested gate driver for realizing optimal switching characteristics of an SI-Thy is effective, particularly in the gate driving circuits for various pulsed-power switching applications. [ABSTRACT FROM PUBLISHER]

Two solid-state bipolar Marx modulators are analyzed and compared regarding hold-off semiconductor voltages and open-fault tolerance capability. Normal and abnormal operating conditions are considered, such as switch synchronization mismatches, failures, and open faults. Ten-stage laboratory prototypes of two bipolar Marx modulators have been assembled using 1200-V insulated gate bipolar transistors and matching diodes, to operate at 500-V dc input voltage. Outputs are 4-kV bipolar pulses, 1% duty ratio, into resistive loads, and 1-kHz frequency. Lack of synchronization and open-fault tests confirm that only topologies with redundant switches can operate without semiconductors being subjected to double hold-off voltages while presenting current paths to clear faults. [ABSTRACT FROM PUBLISHER]

This paper presents a novel technique for the voltage droop compensation of long pulses in solid-state bipolar high-voltage Marx generators. Considering the modularity of Marx generators the compensation consists in adding one extra stage to perform as a pulsewidth modulation circuit. This stage voltage is added to the output positive or negative pulses, and an output LfCf filter is included to smooth the voltage pulse waveform. A five-stage laboratory prototype of this circuit has been assembled using 1200-V Insulated Gate Bipolar Transistors and diodes with 1000-V dc input voltage. The circuit was operated at 50-Hz bipolar pulse rate, giving 4-kV bipolar pulses, into a resistive load, with 100- \mu \texts pulsewidth and 9.5-ms relaxation time. The circuit was able to compensate 10% of bipolar pulse voltage droop. [ABSTRACT FROM PUBLISHER]