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This paper proposes a flyback-circuit-based design of a trigger circuit for a high-power gas switch. By incorporating a flyback circuit in a high-power gas switch, it is possible to generate a high step-up ratio and high-voltage pulse by using a transformer. Furthermore, simple trigger circuit having the minimum possible number of components (transformer and switch) can be realized. When an inductor is used as an energy storage element, energy is stored as a current source, and thus, the element can operate reliably when low impedance exists between the trigger node of the switch after triggering. According to the fundamental operating principle of a flyback circuit, the proposed trigger circuit is designed considering the maximum trigger voltage and energy required for a high-power gas switch. To verify the proposed design procedure and feasibility of the trigger circuit, a compact trigger circuit (7.5 kV, 1.3 mJ/pulse) is simulated using the PSpice program and implemented. Based on this compact circuit, a trigger circuit (20 kV, 100 mJ/pulse) for a triggered vacuum switch (TVS) is developed, and the tests with an actual TVS (3.3 kJ) are carried out. [ABSTRACT FROM AUTHOR]

The meat grinder is a basic circuit for inductive pulsed-power supply (IPPS). Based on meat grinder, the Institute of Advanced Technology proposed a circuit called the slow transfer of energy through capacitive hybrid (STRETCH) meat grinder, in which an Integrated Gate Commutated Thyristors (IGCT) is selected as the main switch. Tsinghua University proposed the STRETCH meat grinder with inverse current commutation with semiconductor devices (ICCOS) in which the main switch is replaced by a thyristor and the ICCOS subcircuit is introduced to turn off the main switch. To reduce the opening switch voltage and increase the current turning-off capacity for IPPS, this paper presents a novel circuit topology named the meat grinder with self-charged capacitor and thyristors (SECTs). The key idea of the SECT topology is to turn off the primary current by the energy transfer capacitor, which is precharged. The meat grinder with SECT has larger capacity than the STRETCH meat grinder because it replaces the IGCT with a thyristor and is simpler than the STRETCH meat grinder with ICCOS because it only needs one capacitor. The suggested circuit is more suitable for IPPS module with high energy density. Simulation and experiment have been carried out to validate the circuit. [ABSTRACT FROM PUBLISHER]

With inherent strengths in energy density and power density, the inductive pulsed power supplies (IPPS) have become an attractive option for the power supplies in electromagnetic launch systems. The meat grinder circuits, including the slow transfer of energy through capacitive hybrid (STRETCH) meat grinder circuit, the STRETCH meat grinder with inverse current commutation with semiconductor devices circuit, and the meat grinder with self-charged capacitor and thyristors circuit, constitute one major branch among the IPPS circuits. This paper summarizes the fundamental research work and contributions of the meat grinder circuits from the perspectives of circuit improvements, performance analysis, inductor design, module collaboration, and efficiency promotion. The future directions of single IPPS module are higher energy level, larger energy density, and higher efficiency. [ABSTRACT FROM PUBLISHER]

This paper reports on the study of physical processes in a high-current vacuum arc shunted by semiconductor elements. The switching dynamics between a vacuum circuit breaker (VCB) and an assembly of several semiconductor elements connected in parallel to the VCB is investigated. The breaking capacity of a VCB-thyristor system is analyzed. It is found that at the instant of current switching, the arc can operate at a rather low voltage of 8–10 V. It is shown that there exists a certain limiting mode close to the conditions for current switching. In this mode, at least two cathode spots are observed. [ABSTRACT FROM PUBLISHER]

Metal–oxide–silicon (MOS)-gate-structure-based power semiconductors, such as MOS field-effect transistors, insulated-gate bipolar transistors, and MOS controlled thyristors, are widely used as high-voltage switch and power modulator components in pulsed-power applications. The power semiconductors are generally connected in series and in parallel in order to increase their maximum switching voltage and current, respectively. It is important to suppress overvoltage or switching stress on power semiconductors connected in series and parallel during an extremely short switching time and at fast operating frequency. Generally, gate drive control techniques and methods for the suppression of high voltage are required. To suppress overvoltage and switching stress, this paper proposes a simple and effective active clamping method rather than the use of a snubber circuit with free switching condition modulation. Based on comparative switching experiments, the active clamping method is expected to suppress switching stress and overvoltage while load and switching conditions are changed without modification of the high-side auxiliary circuit for pulsed-power applications. [ABSTRACT FROM AUTHOR]

It is difficult to design a standard gate driver for optimal switching control of a static induction thyristor (SI-Thy) because of its unique internal structure and the direct commutation switching characteristic between the gate and cathode terminals during the transient turn-on and turn-off switching phases. Therefore, it is important to develop a simple and effective gate driver for achieving optimal fast turn-on and stable switching operations in an SI-Thy under hard-switching conditions. To achieve faster turn-on switching time with shorter gate delay time, impedance matching between the SI-Thy and the turn-on driving circuit component in the gate driver can be realized with additional circuit modification through this paper. To ensure higher stabilities in the turn-off switching phase, forced commutation techniques and additional auxiliary circuits in the gate driver have been devised to suppress the latchup and to eliminate potential ringing possibility. We have demonstrated that our designed and tested gate driver for realizing optimal switching characteristics of an SI-Thy is effective, particularly in the gate driving circuits for various pulsed-power switching applications. [ABSTRACT FROM PUBLISHER]

This paper describes the construction and experimental tests of a 12-kV high-voltage high-action generator based on reverse-switching dynistor (RSD) assembly. The main RSD unit consists of seven 76-mm-diameter dynistor pieces connected in series with a blocking voltage of about 2.4 kV, a magnetic switch based on a 1K101 amorphous alloy core, the trigger system based on a saturable transformer, and a 16-mm RSD assembly; the trigger current could reach 2 kA in amplitude with 1-\mu\s duration under 10 kV. The working voltage rate of this RSD unit is about 8–12 kV. Experiment on a 2.2-mF capacitor test bed under 12 kV working voltage, the switch current amplitude reached 150 kA with 300-\mu\s duration; the transferred charge is about 26.5 C and the action is 2.94 \MA^2\s, respectively. [ABSTRACT FROM AUTHOR]