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All-GaN-integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine treatment and a metal–insulator–semiconductor gate structure on the enhancement mode part. The cascode device exhibited an output current of 300 mA/mm by matching the current drivability of both enhancement and depletion mode parts. The optimization was achieved by shifting the threshold voltage of the depletion mode section to a more negative value with the addition of a dielectric layer under the gate. The switching performance of the cascode was compared to the equivalent GaN enhancement-mode-only device by measuring the hard switching speed at 200 V under an inductive load in a double pulse tester. For the first time, we demonstrate the switching speed advantage of the cascode over equivalent GaN enhancement-mode-only devices, due to the reduced Miller-effect and the unique switching mechanisms. These observations suggest that practical power switches at high power and high switching frequency will benefit as part of an integrated cascode configuration. [ABSTRACT FROM AUTHOR]

Envelope tracking (ET) is a technique designed to enhance the efficiency of radio frequency power amplifiers (RF PA). It is based on providing the voltage to the RF PA with variations that mimic the shape of the envelope of the communication signal that the RF PA is processing. As the bandwidth of these signals can be around several megahertz, the switching frequency of the switching mode power supply designed for ET applications has to be very high. The good switching characteristics of Gallium Nitride devices makes them suitable for this application. This paper presents two multiphase converters to be used as envelope modulators in envelope tracking applications. [ABSTRACT FROM AUTHOR]