1. Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p -Gan Gate HEMTs.
- Author
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Jiang, Zuoheng, Hua, Mengyuan, Huang, Xinran, Li, Lingling, Wang, Chengcai, Chen, Junting, and Chen, Kevin J.
- Subjects
MODULATION-doped field-effect transistors ,IMPACT ionization ,LOGIC circuits - Abstract
In this article, the impacts of the off-state gate bias (VGS,OFF) on dynamic on-resistance (RON) are systematically investigated in commercial Schottky-type p-GaN Gate high-electron-mobility transistors. Double-pulse tester and pulsed I–V system are adopted to evaluate the dynamic RON with various off-state gate and drain bias (VDS,OFF) under hard- and soft-switching conditions. More negative VGS,OFF can aggravate the dynamic RON degradation under both soft- and hard-switching, especially when switching with a high VDS,OFF. The impacts of VGS,OFF on switching transients and off-state stress are investigated separately to reveal the underlying mechanisms, which are found to be associated with the generation and movements of holes. The off-state gate bias of the voltage-driving scheme needs to be carefully considered according to the identified mechanisms in terms of dynamic on-resistance degradation. [ABSTRACT FROM AUTHOR]
- Published
- 2022
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