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This letter proposes an indirect power dissipation level short circuit protection (IPDL-SCP) method for silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (mosfets). Due to differences between normal conducting and short-circuit (SC) conditions, this method is triggered by the voltage oscillation vss at the parasitic inductance (Lss) of the source and directly monitoring vds of SiC mosfet. For verification, the short circuit protection circuit is tested and proved functional on the SC test bench. Experimental results show that the protection circuit can respond to both hard switching fault (HSF) and fault under load (FUL), while the fastest response delays are 75 ns for HSF and 170 ns for FUL. Comparisons with other commonly used SC protection methods have also been made, which show that the proposed IPDL-SCP method has better performance in shorter protection delays. [ABSTRACT FROM AUTHOR]

In this article, an efficiency-oriented hybrid duty modulation (HDM) scheme is proposed for the dual active bridge (DAB) converter that can reduce the inductor root-mean-square (rms) current and extend the switch soft-switching range. First, a complete description of the combination forms of different modulation schemes is presented considering the allocation of the zero-voltage portion. A unified description for these combination forms is obtained in the frequency domain. Second, the symmetric–symmetric duty modulation (SSDM) scheme and asymmetric–symmetric duty modulation (A2SDM) scheme are established to minimize the inductor rms current by considering its fundamental component. Third, the characteristics of SSDM, A2SDM, and the traditional phase shift modulation schemes are compared from several aspects, mainly including the inductor rms current and the soft-switching performance. Furthermore, the loss breakdown analysis results for the three modulation schemes are presented and compared. According to these results, the HDM scheme is proposed to improve the overall efficiency of the DAB converter. Finally, an experimental prototype was built with a peak efficiency of 97%, which validates the effectiveness of the proposed modulation scheme. [ABSTRACT FROM AUTHOR]

Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and high power density to power converters due to their excellent performance. However, their low parasitic capacitance and fast switching speed also make them more susceptible to switching oscillations. The switching oscillations can cause voltage and current overshoots, shoot-through, electromagnetic interference, additional power loss, and even device damage, which can seriously affect the performance of power converters and systems. However, a comprehensive and in-depth overview is lacking on this topic. This article reviews the types, the causes and negative effects, the effects of parasitic parameters and suppression methods of these switching oscillations, which is helpful for practical engineering. First, the switching oscillations are divided into different types, and their causes and negative effects are reviewed. Then, the effects of different parasitic parameters on the switching oscillations are overviewed. It is found that due to the different physical structures of silicon carbide metal-oxide-semiconductor field-effect transistors, enhancement-mode gallium nitride high-electron mobility transistors (eGaN HEMTs), and cascode GaN HEMTs, the effects are also different. Finally, the main methods of suppressing the switching oscillations are summarized, and the advantages and disadvantages of these methods are presented. Furthermore, future research works on this topic and the conclusion of this paper are drawn, which will help readers deepen their understanding of the switching oscillations of WBG devices, and inspire readers to better use WBG devices for high-frequency and high-efficient power conversion. [ABSTRACT FROM AUTHOR]

High step-up boost converters with coupled inductor have attracted much attention in the fuel cell or photovoltaic grid-connected generation system, however, there are few literatures elaborated on the construction ideas and derivation methods of them. Accordingly, in order to obtain a clear roadmap on the derivation and inner connection of these converters, a comprehensive review and analysis are presented in this paper. First, the basic boost converter with coupled inductor is regarded as the basic topology, and its merits and demerits are analyzed in detail. Then, in order to address these demerits, various step-up techniques are introduced, such as the rectifier circuit, the active-clamped circuit, the multi-winding coupled inductor, and the voltage doubler rectifier; and numerous new topologies are continuously proposed by combinations and equivalent simplifications. In addition to a detailed synthesis of each topology, a comparative and quantitative analysis among some important converters is presented, and the optimal one is chosen to build a 250 W prototype. Finally, based on comparisons and analysis, the main characteristics and inner connections of these high step-up boost converters with coupled inductor are identified and clarified. [ABSTRACT FROM AUTHOR]

A single-stage high-frequency resonant ac/ac converter converts the ac-line input voltage into the high-frequency sinusoidal output voltage, which consists of two power conversion units, i.e., a power factor correction (PFC) unit and a high-frequency resonant dc/ac unit, and it can be used to derive a modular multichannel constant current LED driver. By adopting a totem-pole bridgeless PFC boost rectifier to reduce conduction losses, a single-stage bridgeless high-frequency resonant ac/ac converter is proposed in this paper. The operating principle is described, and the performance analysis is presented in detail. Moreover, the quantitative parameter design method of the main circuit is presented, which is suitable for other single-stage ac input converters, such as a single-stage PFC rectifier. Finally, a 130-W prototype has been built and tested to verify the correction of related theoretical analysis and parameter design. [ABSTRACT FROM AUTHOR]

This paper presents a reconfigurable structure dc–dc converter with wide output range and constant peak power (RS-WOCP). This converter is an extension of the traditional isolated dc–dc converter with two output channels by adding an active switch and two diodes. Theoretical analysis indicates that the proposed RS-WOCP converter is able to smoothly reconfigure the output channels in parallel or series to realize wide output voltage range. With this approach, the output voltage is shared equally in the series operating mode and so is the output current in the parallel operating mode. Therefore, the power rating of devices is significantly reduced and the output rectifiers and filters can distribute power losses and thermal stresses. Operating principle, control strategy, modeling, and stability analysis are illustrated in this paper. An experimental prototype of a 200-W DSP-based RS-WOCP converter was built. The experimental results have verified the steady-state performance and fast dynamic response in the whole output voltage range. Comparisons with two close relatives of wide output converters show that the proposed RS-WOCP converter is advantageous for wide output range constant peak power applications. [ABSTRACT FROM AUTHOR]