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Photovoltaic (PV) inverters form the backbone of PV generation. This paper proposes an all-film-capacitor, transformerless single-phase inverter for PV application. The topology is a combination of a front-end boost stage, a half-bridge (HB) inverter stage, and a buck–boost power decoupling stage. The grid ripple power is decoupled by a large swing of the HB capacitors along with a limited ripple on the dc link, thus reducing the capacitance requirement and converter volume. Being an HB-derived inverter, the high-frequency common mode leakage current through the PV parasitic capacitance is mitigated. Furthermore, the dc-link average is optimally controlled to ensure a higher efficiency over wide operating load and power factor range. To validate its operation, a Silicon Carbide based 1-kVA laboratory prototype is built and closed-loop experimental results are provided at 100/75 kHz switching frequency over wide operating conditions. [ABSTRACT FROM AUTHOR]

Two major challenges in the transformerless photovoltaic (PV) inverters are the presence of common-mode leakage currents, and as in most single-phase converters the need for reliable and compact double-line-frequency power decoupling. In the proposed doubly grounded inverter topology with innovative active-power-decoupling approach, both of these issues are simultaneously addressed. The topology allows the PV negative terminal to be directly connected to the neutral, thereby eliminating the capacitive-coupled common-mode ground currents. The decoupling capacitance requirement is minimized by a dynamically variable dc-link with large voltage swing, allowing an all-film-capacitor implementation. Furthermore, the use of wide bandgap devices enables the converter operation at higher switching frequency, resulting in smaller magnetic components. The topology uses only four switches and potentially enables a high power density solution. The operating principles, design and optimization, and control methods are explained in detail, and compared with other transformer-less, active-decoupling topologies. A 3 kVA, 100/75 kHz single-phase hardware prototype at 400 V dc nominal input and 240 V ac output with a wide range of power factor has been developed using SiC MOSFETs with only 45 μF/1100 V dc-link capacitance. Extensive experimental results from the prototype are presented to validate the concept, design, and superior performance of the proposed topology. [ABSTRACT FROM AUTHOR]