Search

All-GaN-integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine treatment and a metal–insulator–semiconductor gate structure on the enhancement mode part. The cascode device exhibited an output current of 300 mA/mm by matching the current drivability of both enhancement and depletion mode parts. The optimization was achieved by shifting the threshold voltage of the depletion mode section to a more negative value with the addition of a dielectric layer under the gate. The switching performance of the cascode was compared to the equivalent GaN enhancement-mode-only device by measuring the hard switching speed at 200 V under an inductive load in a double pulse tester. For the first time, we demonstrate the switching speed advantage of the cascode over equivalent GaN enhancement-mode-only devices, due to the reduced Miller-effect and the unique switching mechanisms. These observations suggest that practical power switches at high power and high switching frequency will benefit as part of an integrated cascode configuration. [ABSTRACT FROM AUTHOR]

To provide a basis for controller design in interleaved dc–dc converters, an improved small-signal averaged model is presented. Sampler decomposition techniques are used to represent the interleaved operation of the individual control loops within the converter. The resultant model reveals interaction effects and instability phenomena that are not predicted by a simple noninterleaved model, and which impose significant restrictions on the selection of control parameters. The model is validated by detailed simulations and experimental results from a digitally controlled dual-interleaved boost converter. [ABSTRACT FROM AUTHOR]

The design of a 200-A, all-SiC power-module-based on bipolar junction transistor devices is described, and the impact of the module is assessed on the performance of a 50-kW dc-dc converter for electric vehicle applications, particularly the overall weight and efficiency. Using a hard-switching dual-interleaved topology, which has proven high efficiency and high-power density capability, the operation of a 50-kW, 75-kHz all-SiC converter is compared with that of an insulated-gate bipolar transistor-based silicon converter, switching at 25 kHz, each providing 600-V output. The results show that the total losses are reduced by almost 40%, whilst the overall weight is reduced by 27%, achieving a power density of 10.5 kW/kg. Experimental results of the SiC converter operating at 220-600 V, 52.8 kW are provided, showing an efficiency of 97%. [ABSTRACT FROM AUTHOR]