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With the improvement in device manufacturing technology, the insulated gate bipolar transistor (IGBT) has been widely used in power electronic systems (PESs), such as power transmission, railway traction inverters, and aerospace. There is an urgent need for the accurate transient electrical model of IGBTs. Based on the improved understanding of the carrier transport process in the high-voltage IGBT during the turn-off stage, this article proposes a new analytical temperature-dependent model of the turn-off transient process for field-stop IGBTs that considers the drive circuit's influence. Compared with existing analytical models, the proposed model improves the accuracy of the description of transient electrical behavior by considering the influence of carrier recombination. Finally, the accuracy of the proposed model is verified by comparing the simulation results with the experimental data obtained by the double pulse test. The comparison results show that the proposed model can accurately simulate the turn-off behavior of high-voltage IGBTs. Compared with the existing analytical model, the accuracy of the proposed model is significantly improved.