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Many of the processes involved in the creation of semiconductor devices involve high-temperature processing of silicon wafers. The benefits of reduced thermal budget and faster cycle time make rapid thermal processing (RTP) a possible key technology for semiconductor manufacturing. However, the problem of nonuniform wafer temperature has prevented it from further spread among the industry. The first step in developing controls to maintain a uniform wafer temperature is accurate temperature measurement during processing. In this paper, a system was developed to exploit the specular reflectivity of silicon wafers and obtain a measurement of the wafer temperature profile. The spectral reflectivity is determined by measuring the intensity of an incident beam and the beam reflected from the wafer surface. With this measured reflectivity value the spectral-directional wafer emissivity was determined using Kirchhoff's law. The obtained emissivity then was used to calculate the wafer temperature profile from an image obtained with an infrared camera. An experimental study of the transmittance of an undoped silicon calibration wafer at an elevated temperature is also discussed. [ABSTRACT FROM AUTHOR]

Accurate measurement of surface temperature distribution is of concern in the semiconductor industries, particularly in rapid thermal processing. The International Technology Roadmap for Semiconductors 2004 has established requirements of uncertainties of ± 1.5 °C at a temperature of 1000 °C, with temperature calibration traceable to ITS-90 (International Temperature Scale-1990). Light-pipe radiation thermometers (LPRTs) are becoming increasingly important as an industrial tool for temperature measurement, especially in the semiconductor industry. However, achieving improved accuracy will be difficult without fully understanding several issues associated with LPRTs. In this paper, the "drawdown effect," the "shadow effect," and the "environmental effect" are investigated. The drawdown effect is caused by the physical mass of the light-pipe probe acting as a radiation heat sink for the measured object. The shadow effect is caused by distortion of the wafer radiosity distribution due to the presence of the light-pipe probe. The environmental effect is caused by nonspecular reflection due to surface imperfection or impurity of the light-pipe material. Monte Carlo simulation was conducted to better understand the underlying physics, and the simulation results are compared to the experiment results. The latter two effects were found to be very important in the present study. [ABSTRACT FROM AUTHOR]

Light-pipe radiation thermometers (LPRTs) are widely used to monitor temperature during thermal processing of materials, particularly semiconductor wafer rapid thermal processing. According to the International Technology Roadmap for Semiconductors 2004, temperatures for semiconductor wafer processing should be measurable to within an uncertainty of ±1.5 °C at 1000 °C with temperature calibration traceable to International Temperature Standard-90. To achieve this accuracy level, the radiation signal transport process inside the light-pipe probe has to be fully understood. Few studies have been conducted to model the radiation transfer of LPRTs. In this paper, a Monte Carlo model has been created to simulate the signal transport from the measurement surface through the light-pipe probe. The model predicts the acceptance angle or aperture of the light-pipe. We also investigated the effect of nonspecular reflections caused by the sidewall surface roughness of the light-pipe probe using this model. [ABSTRACT FROM AUTHOR]