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In this paper, a simple carbon nanotube field effect transistor (CNTFET)-based inverter has been simulated and the impacts of changing various design and process parameters on its characteristics and performance have been analysed using HSPICE. The 32 nm CNTFET model of Stanford University has been used here for the simulation of the inverter. The simulation results and the voltage transfer characteristics (VTC) curve of the inverter have been extracted for (i) different channel lengths, (ii) top gate di-electric material thickness (tox), (iii) pitch value (iv) the number of tubes in CNTFET channel region and (v) chirality of the CNT. It has been observed that the VTC curve changes significantly with different values of these parameters. Some important output parameters like maximum dc current, power, rise time, fall time, average propagation delay, etc. have been measured in each case. Changes in maximum power consumption value due to the change in different parameter values are observed through plotted graphs. Output dc current vs. input voltage graphs have been plotted for different chirality of the tubes, the number of the tubes, and pitch values between n-type CNTFET and p-type CNTFET of the inverter. [ABSTRACT FROM AUTHOR]

This paper presents a miniature-size band-reject filter on a Coplanar Waveguide (CPW) transmission line using series connected complementary split ring resonators (CSRRs) and series capacitive gaps for X-band applications. The band-reject filter has highly miniaturized dimensions and is capable of solving almost all the basic limitations to which the conventional band-reject filters are mostly susceptible. The series connected CSRRs are etched on the signal planes of the CPW transmission line on silicon substrate enabling CMOS compatibility with planar IC technology. It is a concept resulting in higher bandwidth, low insertion loss of 0.5 dB with high rejection of 40 dB in the stop bands better than similar designs. The optimized design of the proposed device is performed using the parametric study of filter characteristics. The proposed devices RF analysis and circuit model are simulated using Ansoft High-Frequency Structural Simulator (HFSS) v13® and Agilent Advanced Design System (ADS) 2009. Measured results are in good agreement with their simulated counterparts and the measured performance is encouraging in all respects. [ABSTRACT FROM AUTHOR]