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Crystallization kinetics is studied in glassy Ge22Se78−xBi x (0≤x≤10) using isothermal annealing at various temperatures between the glass transition and melting. D.c. conductivity is taken as a parameter to estimate the extent of crystallization (α). The activation energy of crystallization (ΔE) and the order parameter (n) are calculated by fitting the values of α in Avrami’s equations of isothermal transformation. The results indicate that ΔE is highly composition dependent and decreases as the Bi concentration increases.

The present paper reports the composition dependence of steady-state and transient photoconductivity in amorphous thin films of Se 70 Te 30−x Sb x , where x is varied from 0 to 10. The results indicate that photoconductivity is highly composition dependent in this system and a discontinuity in various electrical parameters is observed at 4 at. % of Sb. This is explained in terms of increased disorder up to 4 at. % of Sb. However, at higher concentration of Sb, an ordered structure may be established due to the formation of microcrystalline phases as observed in X-ray diffraction patterns

The present paper reports a study of photocrystallization in a-Se70Te30−xCdx films (0≤x≤4). The photocrystallization is achieved by shining white light at room temperature for different exposure times. The results indicate that the photocrystallization is suppressed on addition of Cd in binary Se70Te30 system. This is explained in terms of the structure of Se-Te-Cd system.