1. Effect of nitro substitution of azo-chalcone derivatives nano film on electrical memory properties.
- Author
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Liu, Quan, Lu, Jiu-Fu, and Jin, Ling-Xia
- Subjects
THRESHOLD voltage ,SCHMIDT reaction ,SPIN coating ,COMPUTER storage devices ,GROUP 15 elements ,CHALCONE - Abstract
A nitro substituted azo-chalcone derivative 3-(4-(dimethylamino) phenyl) diazenyl)phenyl)-1-(4-nitrophenyl) prop-2-en-1-one (AZOC-4N) and a reference compound 3-(4-(dimethylamino) phenyl) diazenyl) phenyl)-1-phenylprop-2-en-1-one (AZOC-H) were synthesized by Claisen Schmidt reaction. Thermogravimetry, UV-vis and cyclic voltammetry were used to study the influence of the introduction of nitro in the conjugated molecule AZOC-4N on the photoelectric properties. The active layer was further prepared by solution spin coating, and the morphology of the film was characterized by AFM. The electrical memory performance of the device is studied. It is found that the device has the nonvolatile binary write once read many (WORM) memory performances, and the threshold voltage of the device prepared by introducing nitro group into the molecule is lower—1.4 V. Finally, the electrical memory performance of the device is analyzed by theoretical calculation. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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