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The polycrystalline Dy doped PLZT ceramics with compositional formula [Pb 0.88 (La 1-x Dy x ) 0.12 ](Zr 0.40 Ti 0.60 )O 3 , were prepared by hot-pressed solid-state ceramic method. Dysprosium concentration, x, was varied from 0 to 0.5. Effects of dysprosium substitution on structural and optical properties are report here. All the samples have single phase with tetragonal structure, and the tetragonality was increased with Dy 3+ content increased. The Raman spectra indicated that Dy distribution in A or B site in PLDZT ceramics with different doping amounts. [ABSTRACT FROM AUTHOR]

PLZT thin films were prepared on SrTiO 3 substrate by RF magnetron sputtering method. The electrical measurements were conducted on PLZT films in metal-ferroelectric-semiconductor capacitor configuration (MFS). The PLZT thin films annealed at 650°C showed well-saturated hysteresis loops with remanent polarization and coercive electric field values were 0.3 μ C/cm 2 and 36 KV/cm respectively. The relationship between the orientation of thin film and thermal treating condition was discussed. The PLZT thin films with a thickness of 1.5 um were epitaxially grown on SrTiO 3 substrate successfully. [ABSTRACT FROM AUTHOR]